Strain-Induced Trapping of Indirect Excitons in MoSe2/WSe2 Heterostructures

Wang, Wei; Ma, Xuedan

doi:10.1021/acsphotonics.0c00567

Strain-Induced Trapping of Indirect Excitons in MoSe₂/WSe₂ Heterostructures

Journal Article · Mon Jul 27 00:00:00 EDT 2020 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.0c00567· OSTI ID:1756848

Wang, Wei ^[1]; ^[2]

Univ. of Chicago, IL (United States)
Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)

Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1756848

Journal Information:: ACS Photonics, Journal Name: ACS Photonics Journal Issue: 9 Vol. 7; ISSN 2330-4022

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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