Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures

Calman, E. V.; Fowler-Gerace, L. H.; Choksy, D. J.; Butov, L. V.; Nikonov, D. E.; Young, I. A.; Hu, S.; Mishchenko, A.; Geim, A. K.

doi:10.1021/acs.nanolett.9b05086

Indirect Excitons and Trions in MoSe₂/WSe₂ van der Waals Heterostructures

Journal Article · Tue Feb 18 00:00:00 EST 2020 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.9b05086· OSTI ID:1657334

Calman, E. V. ^[1]; ^[2]; Choksy, D. J. ^[2]; Butov, L. V. ^[2]; Nikonov, D. E. ^[3]; Young, I. A. ^[3]; Hu, S. ^[4]; Mishchenko, A. ^[4]; Geim, A. K. ^[4]

Univ. of California, San Diego, La Jolla, CA (United States); University of California San Diego
Univ. of California, San Diego, La Jolla, CA (United States)
Intel Corporation, Hillsboro, OR (United States)
Univ. of Manchester (United Kingdom)

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. In this work, IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe₂/WSe₂ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, that is, indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures. We also report on the realization of IXs with a luminescence line width reaching 4 meV at low temperatures. An enhancement of IX luminescence intensity and the narrow line width are observed in localized spots.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); Natural Environment Research Council (NERC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-07ER46449

OSTI ID:: 1657334

Alternate ID(s):: OSTI ID: 1773971
OSTI ID: 1657547

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 3 Vol. 20; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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