Achieving large uniform tensile elasticity in microfabricated diamond
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong.
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong., Department of Physics, National Changhua University of Education, Changhua 50007, Taiwan.
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
- School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong., Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong.
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong., Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong., Nano-Manufacturing Laboratory (NML), Shenzhen Research Institute of City University of Hong Kong, Shenzhen, 518057, China.
Diamond is not only the hardest material in nature, but is also an extreme electronic material with an ultrawide bandgap, exceptional carrier mobilities, and thermal conductivity. Straining diamond can push such extreme figures of merit for device applications. We microfabricated single-crystalline diamond bridge structures with ~1 micrometer length by ~100 nanometer width and achieved sample-wide uniform elastic strains under uniaxial tensile loading along the [100], [101], and [111] directions at room temperature. We also demonstrated deep elastic straining of diamond microbridge arrays. The ultralarge, highly controllable elastic strains can fundamentally change the bulk band structures of diamond, including a substantial calculated bandgap reduction as much as ~2 electron volts. Our demonstration highlights the immense application potential of deep elastic strain engineering for photonics, electronics, and quantum information technologies.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1755275
- Journal Information:
- Science, Journal Name: Science Journal Issue: 6524 Vol. 371; ISSN 0036-8075
- Publisher:
- American Association for the Advancement of Science (AAAS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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