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Overview of CMOS Sensors for Future Tracking Detectors

Journal Article · · Instruments

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Spanish Ministry of Science; Generalitat Valenciana
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1752954
Journal Information:
Instruments, Journal Name: Instruments Journal Issue: 4 Vol. 4; ISSN 2410-390X
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English

References (10)

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journal September 2018
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