High-efficiency and durable optoelectronic devices using layered 2D perovskites
Patent
·
OSTI ID:1735242
A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Triad National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 10,770,239
- Application Number:
- 15/641,142
- OSTI ID:
- 1735242
- Resource Relation:
- Patent File Date: 07/03/2017
- Country of Publication:
- United States
- Language:
- English
Hole Transporting and Light Absorbing Material for Solid State Solar Cells
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patent-application | November 2016 |
Optoelectronic Device Comprising Perovskites
|
patent-application | May 2015 |
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