Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Methods of forming interdigitated back contact solar cells

Patent ·
OSTI ID:1735168
Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
10,749,052
Application Number:
15/895,183
OSTI ID:
1735168
Country of Publication:
United States
Language:
English

References (29)

Boosting the efficiency of III-V/Si tandem solar cells conference June 2016
Direct growth of crystalline silicon on GaAs by low temperature PECVD: Towards hybrid tunnel junctions for III-V/Si tandem cells conference June 2016
Modeling three-terminal III- V lSi tandem solar cells
  • Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul
  • 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2017.8366543
conference June 2017
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells journal July 2013
Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAs n p n bipolar transistors journal January 1990
IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts journal December 2016
Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance journal January 2017
A 31%-efficient GaAs/silicon mechanically stacked, multijunction concentrator solar cell conference January 1988
6 inch High efficiency back contact crystalline Si solar cell applying heterojunction and thinfilm technology conference June 2016
A simplified process flow for silicon heterojunction interdigitated back contact solar cells: Using shadow masks and tunnel junctions
  • Herasimenka, Stanislau Y.; Tracy, Clarence J.; Dauksher, William J.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2014.6925434
conference June 2014
Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells journal October 2013
The role of back contact patterning on stability and performance of Si IBC heterojunction solar cells conference June 2014
Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells journal February 1999
Rubidium Multication Perovskite with Optimized Bandgap for Perovskite-Silicon Tandem with over 26% Efficiency journal April 2017
Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%
  • Tomasi, Andrea; Paviet-Salomon, Bertrand; Lachenal, Damien
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2014.6924898
conference June 2014
Surface Passivation for Germanium and Silicon Back Contact Type Photovoltaic Cells conference May 2006
Corrigendum to ‘Solar cell efficiency tables (version 49)’[Prog. Photovolt: Res. Appl. 2017; 25:3-13]: Corrigendum to ‘Solar cell efficiency tables (version 49)’[Prog. Photovolt: Res. Appl. 2017; 25:3-13] journal February 2017
Transparent Conductive Adhesives for Tandem Solar Cells
  • Klein, Talysa R.; Lee, Benjamin G.; Schnabel, Manuel
  • 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2017.8366090
conference June 2017
Interdigitated back contact solar cells with polycrystalline silicon on oxide passivating contacts for both polarities journal July 2017
Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g journal January 2017
Simulation study of GaAsP/Si tandem solar cells journal February 2016
III- V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations conference June 2017
Supercharging Silicon Solar Cell Performance by Means of Multijunction Concept journal May 2015
The realistic energy yield potential of GaAs-on-Si tandem solar cells: a theoretical case study journal January 2015
Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cell journal August 2015
Mechanically stacked 4-terminal III-V/Si tandem solar cells
  • Essig, Stephanie; Allebe, Christophe; Geisz, John F.
  • 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) https://doi.org/10.1109/PVSC.2017.8366325
conference June 2017
Development of lattice-matched 1.7 eV GalnAsP solar cells grown on GaAs by MOVPE conference June 2016
Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency journal July 2016
Upgrading the silicon IBC to the 40% efficiency conference June 2016

Similar Records

Methods of forming interdigitated back contact layers
Patent · Tue Jul 14 00:00:00 EDT 2020 · OSTI ID:1735029

Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells
Conference · Sun Jun 14 00:00:00 EDT 2015 · OSTI ID:1251116

Screen printed interdigitated back contact solar cell
Patent · Tue Oct 23 00:00:00 EDT 1984 · OSTI ID:6071559