Methods of forming interdigitated back contact layers

Nemeth, William Michael; Stradins, Pauls; LaSalvia, Vincenzo Anthony; Page, Matthew Robert; Young, David Levi

Title: Methods of forming interdigitated back contact layers

Patent · Tue Jul 14 00:00:00 EDT 2020

OSTI ID:1735029

Nemeth, William Michael; Stradins, Pauls; LaSalvia, Vincenzo Anthony; Page, Matthew Robert; Young, David Levi

Methods of forming interdigitated back contact (IBC) layers are provided. According to an aspect of the invention, a first layer having alternating regions of n-type amorphous hydrogenated silicon and p-type amorphous hydrogenated silicon is formed on a second layer of intrinsic amorphous hydrogenated silicon. The first layer and the second layer are then annealed, such that dopants from the first layer diffuse into the second layer, and the first layer and the second layer crystallize into polysilicon.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 10,714,652

Application Number:: 16/014,695

OSTI ID:: 1735029

Resource Relation:: Patent File Date: 06/21/2018

Country of Publication:: United States

Language:: English

References (14)

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Method for Fabricating Heterojunction Interdigitated Back Contact Photovoltaic Cells O'Sullivan, Barry https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20140295613 US Patent Application 14/218416; 20140295613	patent-application	October 2014
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Solar Cell with Interdigitated Back Contact Heng, Jiunn Benjamin; Xie, Zhigang; Xu, Zheng https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160020342 US Patent Application 14/802663; 20160020342	patent-application	January 2016
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