Metal chalcogenides for pseudocapacitive applications

Tolbert, Sarah H.; Dunn, Bruce S.; Cook, John; Kim, Hyung-seok; Lin, Terri Chai

Metal chalcogenides for pseudocapacitive applications

Patent · Tue Aug 04 04:00:00 EDT 2020

OSTI ID:1735115

Tolbert, Sarah H.; Dunn, Bruce S.; Cook, John; Kim, Hyung-seok; Lin, Terri Chai

A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.

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Research Organization:: Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: SC0001342; SC0014213

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 10,734,649

Application Number:: 15/359,996

OSTI ID:: 1735115

Country of Publication:: United States

Language:: English

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