Smooth and Vertical Facet Formation for AlGaN-based Deep-UV Laser Diodes.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1707773
- Report Number(s):
- SAND2008-5269P; 517284
- Country of Publication:
- United States
- Language:
- English
Similar Records
Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.
Material and Device Development of AlGaN Based Deep UV Emitters.
Low-Dislocation-Density AlGaN Templates for UV Laser Diodes (invited).
Journal Article
·
Wed Oct 01 00:00:00 EDT 2008
· Proposed for publication in Applied Physics Letters.
·
OSTI ID:951526
Material and Device Development of AlGaN Based Deep UV Emitters.
Conference
·
Thu Aug 01 00:00:00 EDT 2013
·
OSTI ID:1731174
Low-Dislocation-Density AlGaN Templates for UV Laser Diodes (invited).
Conference
·
Wed Dec 31 23:00:00 EST 2014
·
OSTI ID:1244898