Low-Dislocation-Density AlGaN Templates for UV Laser Diodes (invited).
Conference
·
OSTI ID:1244898
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1244898
- Report Number(s):
- SAND2015-0154C; 560410
- Resource Relation:
- Conference: Proposed for presentation at the 2014 Fall Materials Research Society Meeting held November 30 - December 5, 2014 in Boston, MA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
350-nm-Band Edge-Emitting Laser Diodes Enabled by Low-Dislocation-Density AlGaN Templates (invited).
Low Dislocation Density AlGaN Eiplayers for UV Laser Diodes and Devices for Power Electronics (invited).
352-nm Laser Diodes Enabled by Low-Dislocation-Density AlGaN Templates.
Conference
·
Wed Jul 01 00:00:00 EDT 2015
·
OSTI ID:1244898
+5 more
Low Dislocation Density AlGaN Eiplayers for UV Laser Diodes and Devices for Power Electronics (invited).
Conference
·
Sun Nov 01 00:00:00 EDT 2015
·
OSTI ID:1244898
+6 more
352-nm Laser Diodes Enabled by Low-Dislocation-Density AlGaN Templates.
Conference
·
Sun Feb 01 00:00:00 EST 2015
·
OSTI ID:1244898
+1 more