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Title: Heat capacities, entropies, and Gibbs free energies of formation of low-k amorphous Si(O)CH dielectric films and implications for stability during processing

Journal Article · · Journal of Chemical Thermodynamics
; ; ; ; ;

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0016446
OSTI ID:
1703195
Journal Information:
Journal of Chemical Thermodynamics, Journal Name: Journal of Chemical Thermodynamics Vol. 128 Journal Issue: C; ISSN 0021-9614
Publisher:
ElsevierCopyright Statement
Country of Publication:
United Kingdom
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (42)

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Process integration compatibility of low-k and ultra-low-k dielectrics
  • Moore, Darren; Carter, Richard; Cui, Hao
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 1 https://doi.org/10.1116/1.1835315
journal January 2005
Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art journal March 2014
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Film Property Requirements for Hermetic Low-k a-SiO x C y N z :H Dielectric Barriers journal January 2012
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