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Impact Ionization and Freeze-Out Model for Simulation of Low Gate Bias Kink Effect in SOI-MOSFETs Operating at Liquid He Temperature.

Conference ·
OSTI ID:1696836
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1696836
Report Number(s):
SAND2009-3676P; 508073
Country of Publication:
United States
Language:
English