Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1082764
- Report Number(s):
- SAND2013-4637C; 456149
- Country of Publication:
- United States
- Language:
- English
Similar Records
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Conference
·
Tue Oct 01 00:00:00 EDT 2013
·
OSTI ID:1115998
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Conference
·
Mon Jul 01 00:00:00 EDT 2013
·
OSTI ID:1106988
High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices.
Conference
·
Sat Jun 01 00:00:00 EDT 2013
·
OSTI ID:1082760