Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells
Conference
·
· Conference Record of the IEEE Photovoltaic Specialists Conference
Investigate the efficiency potential of n-type screen-printed poly-Si based double-side tunnel oxide passivated contacts (DS-TOPCon) silicon solar cells Establish key material/device parameters and technologies to attain practically achievable DS-TOPCon cell efficiency by Quokka 2D Develop fundamental understanding of underlying mechanisms governing cell operation in front junction (FJ) and rear junction (RJ) cell designs to explain why RJ is a better choice for DS-TOPCon structure
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- EE0008562
- OSTI ID:
- 1696798
- Report Number(s):
- DOE-GIT-Con_presentaion-8562-1
- Journal Information:
- Conference Record of the IEEE Photovoltaic Specialists Conference, Vol. 2020; Conference: 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC), Calgary, Canada, 14-19 Jun 2020 (Virtual meeting); ISSN 0160-8371
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
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