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Thickness regulates the ferroelectric and resistance switching properties of BiFeO3 (Nia/Nib) superlattice films

Journal Article · · Materials Letters
Not Available
Sponsoring Organization:
USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
OSTI ID:
1693721
Journal Information:
Materials Letters, Journal Name: Materials Letters Journal Issue: C Vol. 276; ISSN 0167-577X
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (11)

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors journal January 2011
Multiferroic behavior of heterostructures composed of lanthanum and bismuth ferrite journal November 2016
Multiferroic properties of La/Er/Mn/Co multi-doped BiFeO3 thin films journal June 2019
Multi-doped bismuth ferrite thin films with enhanced multiferroic properties journal July 2019
Effect of different buffer layers on the microstructure and dielectric properties of BaTiO3 thin films grown on Si substrates journal May 2009
Sol–gel synthesis and properties of multiferroic BiFeO3 journal December 2005
Resistive switching and ferroelectric properties in BiFeO3 superlattice films journal October 2018
The thickness dependence of the phase transition temperature in PVDF journal July 2013
Growth temperature dependent dielectric properties of BiFeO3 thin films deposited on silica glass substrates journal April 2012
Resistive switching and related magnetization switching in Pt/BiFeO 3 /Nb:SrTiO 3 heterostructures journal January 2017
Progress in BiFeO 3 -based heterostructures: materials, properties and applications journal January 2020

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