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Extremely large anisotropic transport caused by electronic phase separation in Ti-doped Ca3Ru2O7

Journal Article · · Journal of Physics. D, Applied Physics
 [1];  [2];  [3];  [3];  [3];  [2];  [3];  [3]
  1. Nanjing University (China); Tulane University, New Orleans, LA (United States); Louisiana State University
  2. Tulane University, New Orleans, LA (United States)
  3. Nanjing University (China)
In this paper, we reported an extremely large out-of-plane/in-plane anisotropic transport ($${{\rho}_{c}}/{{\rho}_{ab}}$$ ~ 109) in double layer ruthenates. The mechanism that may be responsible for this phenomenon is also explored here. Distinct from previously well studied layered materials which show large out-of-plane/in-plane electronic anisotropy (103–106), the Ti-doped Ca3Ru2O7 single crystals not only form quasi-2D layered structure, but also show phase separation within the layers. We found that Ti doping in Ca3Ru2O7 induced electronic phase separation between the insulating phase and weak localized phase. The ratio of these two phases is very sensitive to the Ti concentration. At typical concentration, the weak localized phase may form a channel on the background of the insulating phase within the ab plane. However, the small volume of weak localized phase makes it less likely to overlap in different layers. This results in a much larger electronic anisotropy ratio than pristine compound Ca3Ru2O7. Furthermore, this new mechanism provides a route for further increase electronic anisotropy, which will remarkably reduce current leak and power consumption in electronic devices.
Research Organization:
Louisiana State University, Baton Rouge, LA (United States)
Sponsoring Organization:
NSF; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012432
OSTI ID:
1673757
Alternate ID(s):
OSTI ID: 22867447
Journal Information:
Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 24 Vol. 49; ISSN 0022-3727
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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