Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems

Raiford, James A.; Belisle, Rebecca A.; Bush, Kevin A.; Prasanna, Rohit; Palmstrom, Axel F.; McGehee, Michael D.; Bent, Stacey F.

doi:10.1039/c9se00081j

Title: Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems

Journal Article · Tue Jan 01 00:00:00 EST 2019 · Sustainable Energy & Fuels

DOI:https://doi.org/10.1039/c9se00081j· OSTI ID:1671795

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Stanford Univ., CA (United States)
Wellesley College, Wellesley, MA (United States); Stanford Univ., CA (United States)
Stanford Univ., CA (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Colorado, Boulder, CO (United States)

Two critical issues associated with semi-transparent, n–i–p perovskite solar cells for 2-terminal tandem devices are parasitic absorption and long-term instability associated with the widely used spiro-OMeTAD and MoO_x hole transport and buffer layers, respectively. Here in this work, we present an alternative hole contact bilayer that consists of a 30 nm undoped layer of spiro-TTB in conjunction with 9 nm of air-stable vanadium oxide (VO_x ) deposited via atomic layer deposition. The low absorption of UV and visible light in this bilayer results in the fabrication of a semi-transparent perovskite cell with 18.9 mA cm ^-2 of photocurrent, a 14% increase compared to the 16.6 mA cm ^-2 generated in a control device with 150 nm of doped spiro-OMeTAD. The ALD VO_x buffer layer shows promise as a stable alternative to MoO_x ; an unencapsulated Cs_0.17FA_0.83Pb(Br_0.17 I _0.83)₃ device with ALD VO_x and ITO as the top contact maintains its efficiency following 1000 hours at 85 °C in a N₂ environment. Lastly, we use transfer matrix modeling of the optimized perovskite stack to predict its optical performance in a monolithic tandem cell with heterojunction silicon.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0008167; EE0008154

OSTI ID:: 1671795

Alternate ID(s):: OSTI ID: 1509515

Journal Information:: Sustainable Energy & Fuels, Vol. 3, Issue 6; ISSN 2398-4902

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 65 works

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