Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems
Abstract
Two critical issues associated with semi-transparent, n–i–p perovskite solar cells for 2-terminal tandem devices are parasitic absorption and long-term instability associated with the widely used spiro-OMeTAD and MoOx hole transport and buffer layers, respectively. Here in this work, we present an alternative hole contact bilayer that consists of a 30 nm undoped layer of spiro-TTB in conjunction with 9 nm of air-stable vanadium oxide (VOx ) deposited via atomic layer deposition. The low absorption of UV and visible light in this bilayer results in the fabrication of a semi-transparent perovskite cell with 18.9 mA cm -2 of photocurrent, a 14% increase compared to the 16.6 mA cm -2 generated in a control device with 150 nm of doped spiro-OMeTAD. The ALD VOx buffer layer shows promise as a stable alternative to MoOx ; an unencapsulated Cs0.17FA0.83Pb(Br0.17 I 0.83)3 device with ALD VOx and ITO as the top contact maintains its efficiency following 1000 hours at 85 °C in a N2 environment. Lastly, we use transfer matrix modeling of the optimized perovskite stack to predict its optical performance in a monolithic tandem cell with heterojunction silicon.
- Authors:
-
- Stanford Univ., CA (United States)
- Wellesley College, Wellesley, MA (United States); Stanford Univ., CA (United States)
- Stanford Univ., CA (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Univ. of Colorado, Boulder, CO (United States)
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1671795
- Alternate Identifier(s):
- OSTI ID: 1509515
- Grant/Contract Number:
- EE0008167; EE0008154
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Sustainable Energy & Fuels
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 6; Journal ID: ISSN 2398-4902
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Raiford, James A., Belisle, Rebecca A., Bush, Kevin A., Prasanna, Rohit, Palmstrom, Axel F., McGehee, Michael D., and Bent, Stacey F. Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems. United States: N. p., 2019.
Web. doi:10.1039/c9se00081j.
Raiford, James A., Belisle, Rebecca A., Bush, Kevin A., Prasanna, Rohit, Palmstrom, Axel F., McGehee, Michael D., & Bent, Stacey F. Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems. United States. https://doi.org/10.1039/c9se00081j
Raiford, James A., Belisle, Rebecca A., Bush, Kevin A., Prasanna, Rohit, Palmstrom, Axel F., McGehee, Michael D., and Bent, Stacey F. 2019.
"Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems". United States. https://doi.org/10.1039/c9se00081j. https://www.osti.gov/servlets/purl/1671795.
@article{osti_1671795,
title = {Atomic layer deposition of vanadium oxide to reduce parasitic absorption and improve stability in n–i–p perovskite solar cells for tandems},
author = {Raiford, James A. and Belisle, Rebecca A. and Bush, Kevin A. and Prasanna, Rohit and Palmstrom, Axel F. and McGehee, Michael D. and Bent, Stacey F.},
abstractNote = {Two critical issues associated with semi-transparent, n–i–p perovskite solar cells for 2-terminal tandem devices are parasitic absorption and long-term instability associated with the widely used spiro-OMeTAD and MoOx hole transport and buffer layers, respectively. Here in this work, we present an alternative hole contact bilayer that consists of a 30 nm undoped layer of spiro-TTB in conjunction with 9 nm of air-stable vanadium oxide (VOx ) deposited via atomic layer deposition. The low absorption of UV and visible light in this bilayer results in the fabrication of a semi-transparent perovskite cell with 18.9 mA cm -2 of photocurrent, a 14% increase compared to the 16.6 mA cm -2 generated in a control device with 150 nm of doped spiro-OMeTAD. The ALD VOx buffer layer shows promise as a stable alternative to MoOx ; an unencapsulated Cs0.17FA0.83Pb(Br0.17 I 0.83)3 device with ALD VOx and ITO as the top contact maintains its efficiency following 1000 hours at 85 °C in a N2 environment. Lastly, we use transfer matrix modeling of the optimized perovskite stack to predict its optical performance in a monolithic tandem cell with heterojunction silicon.},
doi = {10.1039/c9se00081j},
url = {https://www.osti.gov/biblio/1671795},
journal = {Sustainable Energy & Fuels},
issn = {2398-4902},
number = 6,
volume = 3,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2019},
month = {Tue Jan 01 00:00:00 EST 2019}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
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