Thermal emittance and lifetime of alkali-antimonide photocathodes grown on GaAs and molybdenum substrates evaluated in a –300 kV dc photogun
Journal Article
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· Physical Review Accelerators and Beams
In this work, CsxKySb photocathodes grown on GaAs and molybdenum substrates were evaluated using a –300 kV dc high voltage photogun and diagnostic beam line. Photocathodes grown on GaAs substrates, with varying antimony layer thickness (estimated range from <20 nm to >1 um), yielded similar thermal emittance per rms laser spot size values (~0.4 mmmrad=mm) but very different operating lifetime. Similar thermal emittance was obtained for a photocathode grown on a molybdenum substrate but with markedly improved lifetime. For this photocathode, no decay in quantum efficiency was measured at 4.5 mA average current and with peak current 0.55 A at the photocathode.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Nuclear Physics (NP); USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- AC05-06OR23177
- OSTI ID:
- 1670828
- Alternate ID(s):
- OSTI ID: 1670990
- Report Number(s):
- JLAB-ACO-20-3246; DOE/OR/23177-5050; PRABCJ; 103401
- Journal Information:
- Physical Review Accelerators and Beams, Journal Name: Physical Review Accelerators and Beams Vol. 23 Journal Issue: 10; ISSN 2469-9888
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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