USING A 100 KV DC LOAD LOCK PHOTOGUN TO MEASURE PHOTOCATHODE LIFETIME OF HIGH POLARIZATION STRAINED SUPERLATTICE GAAS/GAASP AT BEAM INTENSITY >1 MILLIAMP
Conference
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OSTI ID:909345
A new GaAs DC high voltage load lock photogun has been constructed at Jefferson Laboratory (JLab), with improved vacuum and photocathode preparation capabilities. As reported previously, this gun was used to study photocathode lifetime with bulk GaAs at DC beam currents between 1 and 10 mA. In this submission, lifetime measurements were performed using high polarization strained-superlattice GaAs photocathode material at beam currents up to 1 mA, with near bandgap light from a fiber based drive laser having picosecond optical pulses and RF time structure.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE - Office of Energy Research (ER)
- DOE Contract Number:
- AC05-06OR23177
- OSTI ID:
- 909345
- Report Number(s):
- JLAB-ACO-07-670; DOE/OR/23177-0076; TRN: US0703879
- Resource Relation:
- Conference: 2007 IEEE Particle Accelerator Conference, Albuquerque, NM, 25-30 June 2007
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:909345