Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Foster, Geoffrey M.; Koehler, Andrew; Ebrish, Mona; Gallagher, James; Anderson, Travis; Noesges, Brenton; Brillson, Leonard; Gunning, Brendan; Hobart, Karl D.; Kub, Francis

doi:10.1063/5.0021153

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments

Journal Article · Fri Aug 28 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0021153· OSTI ID:1667419

^[1]; Koehler, Andrew ^[1]; Ebrish, Mona ^[1]; Gallagher, James ^[1]; Anderson, Travis ^[1]; Noesges, Brenton ^[2]; ^[3]; ^[4]; ^[1]; Kub, Francis ^[1]

Naval Research Lab. (NRL), Washington, DC (United States)
The Ohio State Univ., Columbus, OH (United States). Dept. of Physics
The Ohio State Univ., Columbus, OH (United States). Dept. of Physics and Dept. of Electrical and Computer Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Plasma etching of p-type GaN creates n-type nitrogen vacancy (V_N) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O₃ treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced V_N defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the V_N defect.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Department of the Navy, Office of Naval Research (ONR); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1667419

Report Number(s):: SAND--2020-9081J; 690271

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 117; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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cathodoluminescence spectroscopy
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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

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Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments