High voltage GaN p-n diodes formed by selective area regrowth

Armstrong, A. M.; Pickrell, G. P.; Allerman, A. A.; Crawford, M. H.; Glaser, C. E.; Smith, T.; Abate, V. M.

doi:10.1049/el.2019.3587

High voltage GaN p-n diodes formed by selective area regrowth

Journal Article · Sun Feb 16 23:00:00 EST 2020 · Electronics Letters

DOI:https://doi.org/10.1049/el.2019.3587· OSTI ID:1650176

Armstrong, A. M. ^[1]; Pickrell, G. P. ^[1]; Allerman, A. A. ^[1]; Crawford, M. H. ^[1]; Glaser, C. E. ^[1]; Smith, T. ^[1]; Abate, V. M. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 gm diameter achieved 840 V operation at 0.5 A/cm² reverse current leakage and a specific on-resistance of 1.2 mΩ•cm². Etched-and-regrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch-induced defectivity of the junction was sufficiently mitigated soas not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1650176

Report Number(s):: SAND2020--8444J; 689949

Journal Information:: Electronics Letters, Journal Name: Electronics Letters Journal Issue: 4 Vol. 56; ISSN 0013-5194

Publisher:: Institution of Engineering and Technology (IET)Copyright Statement

Country of Publication:: United States

Language:: English

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