Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

Duan, Jianan; Zhou, Yueguang; Dong, Bozhang; Huang, Heming; Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wang, Cheng; Bowers, John E.; Grillot, Frédéric

doi:10.1364/OL.395499

Title: Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

Journal Article · Mon Aug 31 00:00:00 EDT 2020 · Optics Letters

DOI:https://doi.org/10.1364/OL.395499· OSTI ID:1656688

; Zhou, Yueguang;

; Huang, Heming;

; Jung, Daehwan;

;

; Grillot, Frédéric

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of $- <#comment/> 150 d B / H z$ . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: DEAR0001039

OSTI ID:: 1656688

Journal Information:: Optics Letters, Journal Name: Optics Letters Vol. 45 Journal Issue: 17; ISSN 0146-9592

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

References (22)

Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Jung, Daehwan; Norman, Justin; Wan, Yating physica status solidi (a), Vol. 216, Issue 1 https://doi.org/10.1002/pssa.201800602	journal	December 2018
Low-noise 13 μm InAs/GaAs quantum dot laser monolithically grown on silicon Liao, Mengya; Chen, Siming; Liu, Zhixin Photonics Research, Vol. 6, Issue 11 https://doi.org/10.1364/PRJ.6.001062	journal	January 2018
A simple analytic expression for the stable operation range of laser diodes with optical feedback Helms, J.; Petermann, K. IEEE Journal of Quantum Electronics, Vol. 26, Issue 5 https://doi.org/10.1109/3.55523	journal	May 1990
On quantum-dot lasing at gain peak with linewidth enhancement factor α _H = 0 Chow, Weng W.; Zhang, Zeyu; Norman, Justin C. APL Photonics, Vol. 5, Issue 2 https://doi.org/10.1063/1.5133075	journal	February 2020
High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si Jung, Daehwan; Norman, Justin; Kennedy, M. J. Applied Physics Letters, Vol. 111, Issue 12 https://doi.org/10.1063/1.4993226	journal	September 2017
Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers Duan, Jianan; Wang, Xing-Guang; Zhou, Yue-Guang IEEE Journal of Quantum Electronics, Vol. 54, Issue 6 https://doi.org/10.1109/JQE.2018.2880452	journal	December 2018
Diode Lasers and Photonic Integrated Circuits Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L. John Wiley & Sons, Inc. https://doi.org/10.1002/9781118148167	book	January 2012
The Importance of p-Doping for Quantum Dot Laser on Silicon Performance Norman, Justin C.; Zhang, Zeyu; Jung, Daehwan IEEE Journal of Quantum Electronics, Vol. 55, Issue 6 https://doi.org/10.1109/JQE.2019.2941579	journal	December 2019
The impact of p-doping on the static and dynamic properties of 1.5 μm quantum dash lasers on InP Hein, S.; von Hinten, V.; Höfling, S. Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2830020	journal	January 2008
Microwave frequency characterization of undoped and p-doped quantum dot lasers Martinez, Anthony; Li, Yan; Lester, Luke F. Applied Physics Letters, Vol. 90, Issue 25 https://doi.org/10.1063/1.2749432	journal	June 2007
Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge Zhou, Yue-Guang; Zhou, Cheng; Cao, Chun-Fang Optics Express, Vol. 25, Issue 23 https://doi.org/10.1364/OE.25.028817	journal	January 2017
The role of p -type doping and the density of states on the modulation response of quantum dot lasers Shchekin, O. B.; Deppe, D. G. Applied Physics Letters, Vol. 80, Issue 15 https://doi.org/10.1063/1.1469212	journal	April 2002
Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications Nishi, Kenichi; Takemasa, Keizo; Sugawara, Mitsuru IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 6 https://doi.org/10.1109/JSTQE.2017.2699787	journal	November 2017
Nonlinear dynamics of doped semiconductor quantum dot lasers Lüdge, K.; Schöll, E. The European Physical Journal D, Vol. 58, Issue 2 https://doi.org/10.1140/epjd/e2010-00041-8	journal	March 2010
Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback Huang, H.; Duan, J.; Dong, B. APL Photonics, Vol. 5, Issue 1 https://doi.org/10.1063/1.5120029	journal	January 2020
A Review of High-Performance Quantum Dot Lasers on Silicon Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu IEEE Journal of Quantum Electronics, Vol. 55, Issue 2 https://doi.org/10.1109/JQE.2019.2901508	journal	April 2019
1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon Duan, Jianan; Huang, Heming; Dong, Bozhang IEEE Photonics Technology Letters, Vol. 31, Issue 5 https://doi.org/10.1109/LPT.2019.2895049	journal	March 2019
Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser Capua, A.; Rozenfeld, L.; Mikhelashvili, V. Optics Express, Vol. 15, Issue 9 https://doi.org/10.1364/OE.15.005388	journal	January 2007
Systematic Study of the Effects of Modulation p-Doping on 1.3-$\mu{\hbox {m}}$ Quantum-Dot Lasers Alexander, Ryan R.; Childs, David T. D.; Agarwal, Harsh IEEE Journal of Quantum Electronics, Vol. 43, Issue 12 https://doi.org/10.1109/JQE.2007.907213	journal	December 2007
Analysis of the effects of doping and barrier design on the small-signal modulation characteristics of long-wavelength multiple quantum well lasers Ishikawa, T.; Nagarajan, R.; Bowers, J. E. Optical and Quantum Electronics, Vol. 26, Issue 7 https://doi.org/10.1007/BF00326663	journal	July 1994
Dynamics of InAs/GaAs quantum dot lasers epitaxially grown on Ge or Si substrate Wang, Cheng; Zhou, Yueguang Journal of Semiconductors, Vol. 40, Issue 10 https://doi.org/10.1088/1674-4926/40/10/101306	journal	October 2019
Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m Lelarge, Franois; Dagens, Batrice; Renaudier, Jeremie IEEE Journal of Selected Topics in Quantum Electronics, Vol. 13, Issue 1 https://doi.org/10.1109/JSTQE.2006.887154	journal	January 2007

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