The influence of indium content and pulverization on the thermoelectric properties of cold pressed (Bi{sub 2}Te{sub 3}){sub {ital x}}(Sb{sub 2}Te{sub 3}){sub {ital y}}(Bi{sub 2}Se{sub 3}){sub {ital z}} {ital N}-type thermoelectric materials
Journal Article
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· AIP Conference Proceedings
OSTI ID:165429
- Joint Laboratory of Solid State Chemistry, Czech Academy of Sciences and University Pardubice, Studentska 84, 530 09 Pardubice (Czech Republic)
The dependence of the electrical conductivity, thermoelectric power and figure of merit on the grain size in cold pressed Bi{sub 1.8}Sb{sub 0.2{minus}{ital x}}In{sub {ital x}}Te{sub 2.85}Se{sub 0.15}, where {ital x}=0, 0.01, 0.02 was measured. The influence of the indium content and grain size on the thermoelectric properties is discussed. In this materials the changes of the free carrier concentration are due to the interaction between antisite-defects and vacancies during the sintering. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 165429
- Report Number(s):
- CONF-940830--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 316; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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