Effects of composition and process parameters on the thermoelectric properties of {ital n}-type Bi{sub 2}Te{sub 3}-Bi{sub 2}Se{sub 3} solid solutions
- Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul (Korea, Republic of)
The Bi{sub 2}Te{sub 3}-Bi{sub 2}Se{sub 3} solid solutions were grown by the zone melting method and material factor, {mu}{sub 0}({ital m}*/{ital m}{sup 0}){sup 3/2}/{bold k}{sub ph}, of these crystals were calculated from the measured values of the thermal conductivity, Seebeck coefficient, and electrical resistivity. It was found that Bi{sub 2}Se{sub 3} content of this solid solution must be between 6 and 10 mol % to obtain high figure of merit near room temperature. To optimize carrier concentration Cdl{sub 2} or CdCl{sub 2} was doped to 90%Bi{sub 2}Te{sub 3}-10%Bi{sub 2}Se{sub 3} solid solution and their doping characteristics were compared. The effects of process parameters on the thermoelectric properties of these {ital n}-type solid solutions were also reported. The figure of merit of 2.85{times}10{sup {minus}3} K{sup {minus}1} could be obtained by optimizing process condition. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165422
- Report Number(s):
- CONF-940830--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 316; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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