Microstructure control of {beta}-FeSi{sub 2} ceramics by rf-plasma processing in SiH{sub 4} and GeH{sub 4} gases

Journal Article · Wed Aug 10 00:00:00 EDT 1994 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.46800· OSTI ID:165403

Kishimoto, K; Nagamoto, Y ^[1]; Nagao, K ^[2]; Miki, T; Koyanagi, T; Matsubara, K ^[1]

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1. Faculty of Engineering, Yamaguchi University, Ube 755 (Japan)
2. Corporate Research and Development, UBE Industries, LTD, Ube 755 (Japan)

The micrograins of Cr-doped FeSi{sub 2} alloys were exposed to rf-plasma of germane (GeH{sub 4}) gas and mixture gas of germane and silane (SiH{sub 4}), and then sintered. The resulting {beta}-Fe{sub 0.9}Cr{sub 0.1}Si{sub 2} ({ital p}-type) ceramics have smaller thermal conductivities and larger electrical conductivities than untreated ones. These results suggest that the microstructure control by plasma treatment is effective for improving the thermoelectric properties of FeSi{sub 2} ceramics. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Sponsoring Organization: USDOE
• OSTI ID: 165403
• Report Number(s): CONF-940830--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 316; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CHROMIUM ADDITIONS
ELECTRIC CONDUCTIVITY
GERMANIUM HYDRIDES
IRON SILICIDES
MICROSTRUCTURE
SILANES
SINTERED MATERIALS
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES