Thermoelectric properties and structure of Me{sub {ital x}}Si{sub 1{minus}{ital x}}(Me=Ir,Fe,Re) thin films
- Institute of Solid State and Materials Sciences e.V., D-01171 Dresden (Germany)
- Physico-Technical Ioffe Institute, 194021 St. Petersburg (Russian Federation)
The thermopower and resistivity of Me{sub {ital x}}Si{sub 1{minus}{ital x}}(Me=Fe, Ir and Re) thin films have been investigated with compositions in the vicinity and outside of the stoichiometry of the corresponding semiconducting silicides. {ital In} {ital situ} measurements up to 1100 K give insight into crystallization processes during annealing of the as-deposited amorphous films. Outside the stoichiometric compositions systematic changes of the thermopower on composition have been found, which are discussed on the basis of results from phase analysis. The behavior of the Re-Si films is different in comparison with the other two systems because of the high degeneracy of the corresponding silicide ReSi{sub 2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 165393
- Report Number(s):
- CONF-940830--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 316; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructure of radio frequency sputtered Ag{sub 1{minus}{ital x}}Si{sub {ital x}} alloys
Phase stabilities and surface morphologies of (Ti{sub 1{minus}{ital x}}Zr{sub {ital x}})Si{sub 2} thin films on Si(100)