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Relative calibration of photodiodes in the soft-x-ray spectral range

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.1145434· OSTI ID:165347
; ;  [1]
  1. Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Federale de Lausanne, Association EURATOM-Confederation Suisse, Avenue des Bains 21, CH-1007 Lausanne (Switzerland)
A method of obtaining a relative calibration of Si photodiodes for the spectral range of soft x rays (1--30 keV) is presented. A simple mathematical model of the {ital p}-{ital n} diode is adopted which allows the response to be described in terms of a small set of parameters. The diffusion length as well as the thickness of a dead layer below the front surface of the diodes are obtained from measurements of angular dependences of the photoinduced current. It is shown that a precise characterization of the diode response and an accurate relative calibration can be obtained using this method. However, it was found that the presence of a dead layer a few tenths of a micrometer thick can pose severe restrictions on the use of planar diode arrays in x-ray tomography systems where uniformity of response is crucial. The method has been applied to the diode arrays equipping the x-ray tomography system built for the TCV tokamak, a magnetic fusion research device. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
OSTI ID:
165347
Journal Information:
Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 7 Vol. 66; ISSN 0034-6748; ISSN RSINAK
Country of Publication:
United States
Language:
English

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