Metal-insulator transition in the two-band Hubbard model

Journal Article · Mon May 15 04:00:00 EDT 1995 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.51.14693· OSTI ID:165343

Barford, W ^[1]; Gagliano, E R ^[2]; Vermeulen, C ^[1]

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1. Department of Physics, The University of Sheffield, Sheffield, S37HR (United Kingdom)
2. Physics Department, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States)

Calculations of the single-particle spectral function for the two-band Hubbard model as a function of doping and nearest-neighbor Coulomb repulsion are performed on finite-size clusters. It is shown that for hole doping the effect of the nearest-neighbor Coulomb repulsion leads to the effective pinning of the Fermi energy, and to the creation of new states in the charge-transfer gap. For electron doping, however, the model behaves as a one-band Hubbard model with the Fermi energy moving into the conduction band. The results of this calculation are in qualitative agreement with some of the spectroscopic studies of the electronic structure at the Fermi energy of the high-temperature cuprate superconductors.

• OSTI ID: 165343
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 51; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BAND THEORY
CRYSTAL DOPING
CUPRATES
ELECTRIC CONDUCTIVITY
EXCITONS
FERMI LEVEL
HIGH-TC SUPERCONDUCTORS
HUBBARD MODEL