Gap formation processes in a high-density plasma opening switch

Journal Article · Sun Jan 01 04:00:00 EST 1995 · Physics of Plasmas

DOI:https://doi.org/10.1063/1.871106· OSTI ID:164974

Grossmann, J M; Swanekamp, S B; Ottinger, P F; Commisso, R J; Hinshelwood, D D; Weber, B V ^[1]

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1. Pulsed Power Physics Branch, Plasma Physics Division, Naval Research Laboratory, Washington, D. C. 20375-5000 (United States)

A gap opening process in plasma opening switches (POS) is examined with the aid of numerical simulations. In these simulations, a high density ({ital n}{sub {ital e}}=10{sup 14}--5{times}10{sup 15} cm{sup {minus}3}) uniform plasma initially bridges a small section of the coaxial transmission line of an inductive energy storage generator. A short section of vacuum transmission line connects the POS to a short circuit load. The results presented here extend previous simulations in the {ital n}{sub {ital e}}=10{sup 12}--10{sup 13} cm{sup {minus}3} density regime. The simulations show that a two-dimensional (2-D) sheath forms in the plasma near a cathode. This sheath is positively charged, and electrostatic sheath potentials that are large compared to the anode--cathode voltage develop. Initially, the 2-D sheath is located at the generator edge of the plasma. As ions are accelerated out of the sheath, it retains its original 2-D structure, but migrates axially toward the load creating a magnetically insulated gap in its wake. When the sheath reaches the load edge of the POS, the POS stops conducting current and the load current increases rapidly. At the end of the conduction phase a gap exists in the POS whose size is determined by the radial dimensions of the 2-D sheath. Simulations at various plasma densities and current levels show that the radial size of the gap scales roughly as {ital B}/{ital n}{sub {ital e}}, where {ital B} is the magnetic field. The results of this work are discussed in the context of long-conduction-time POS physics, but exhibit the same physical gap formation mechanisms as earlier lower density simulations more relevant to short-conduction-time POS. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• OSTI ID: 164974
• Journal Information: Physics of Plasmas, Journal Name: Physics of Plasmas Journal Issue: 1 Vol. 2; ISSN PHPAEN; ISSN 1070-664X
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
CATHODES
ENERGY STORAGE SYSTEMS
PLASMA DENSITY
PLASMA SHEATH
PLASMA SIMULATION
PLASMA SWITCHES
SCALING LAWS