Selective Area Growth of p-type GaN for Gallium Nitride Power Switching Transistors (invited).

Conference · Tue Oct 01 00:00:00 EDT 2019

OSTI ID:1642881

Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Allerman, Andrew A.; Armstrong, Andrew; Armstrong, Andrew; Pickrell, Gregory; Pickrell, Gregory; Crawford, Mary H.; Crawford, Mary H.; Talin, Albert Alec; Talin, Albert Alec; Leonard, Francois Leonard; Leonard, Francois Leonard; Celio, Kimberlee Chiyoko; Celio, Kimberlee Chiyoko; Feezell, Daniel; Feezell, Daniel; Aragon, A. A.; Aragon, A. A. ; Kaplar, Robert; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1642881
• Report Number(s): SAND2019-12588C; 680511
• Resource Relation: Conference: Proposed for presentation at the 236th ECS Meeting held October 13-17, 2019 in Atlanta, GA.
• Country of Publication: United States
• Language: English