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Selective Area Growth of p-type GaN for Gallium Nitride Power Switching Transistors (invited).

Conference ·
OSTI ID:1642881
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1642881
Report Number(s):
SAND2019-12588C; 680511
Country of Publication:
United States
Language:
English

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