Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Artificial synapses based on electrochemical lithium insertion into metal oxides for neuromorphic computing.

Conference ·
OSTI ID:1640942
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1640942
Report Number(s):
SAND2019-7110C; 676718
Country of Publication:
United States
Language:
English

Similar Records

Ionic floating-gate memory as an artificial synapse for neuromorphic computing.
Conference · Wed Jan 31 23:00:00 EST 2018 · OSTI ID:1498597

Electrochemical ion insertion for neuromorphic computing and plasmonics.
Conference · Tue May 01 00:00:00 EDT 2018 · OSTI ID:1511986

Electrochemical ion insertion for energy storage and neuromorphic computing.
Conference · Wed Feb 28 23:00:00 EST 2018 · OSTI ID:1504567

Related Subjects