Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Top-Down Etching of III-Nitride Nanostructures (invited).

Conference ·
OSTI ID:1640202

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1640202
Report Number(s):
SAND2019-5954C; 675879
Country of Publication:
United States
Language:
English

Similar Records

Top-Down Etching of GaN Nanostructures for Optoelectronics and Beyond (invited).
Conference · Sat Jul 01 00:00:00 EDT 2017 · OSTI ID:1463436

Top-Down Etch Processes for III-Nitride Nanophotonics.
Conference · Sun Sep 01 00:00:00 EDT 2019 · OSTI ID:1642613

Top-Down Fabricated III-Nitride Nanowire Photonics (invited).
Conference · Sat Dec 31 23:00:00 EST 2016 · OSTI ID:1427045

Related Subjects