Ultrahigh capacitive energy density in ion-bombarded relaxor ferroelectric films
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- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
- Department of Physics, University of California, Berkeley, CA 94720, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA., Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-05-CH11231; SC-0012375
- OSTI ID:
- 1635749
- Journal Information:
- Science, Journal Name: Science Vol. 369 Journal Issue: 6499; ISSN 0036-8075
- Publisher:
- American Association for the Advancement of Science (AAAS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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