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Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

Journal Article · · Materials
DOI:https://doi.org/10.3390/ma7010365· OSTI ID:1628443
 [1];  [2];  [2];  [3]
  1. Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics; DOE/OSTI
  2. Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon.

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC52-07NA27344
OSTI ID:
1628443
Journal Information:
Materials, Journal Name: Materials Journal Issue: 1 Vol. 7; ISSN 1996-1944; ISSN MATEG9
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English

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