Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Caspers, C.; Gloskovskii, A.; Gorgoi, M.; Besson, C.; Luysberg, M.; Rushchanskii, K. Z.; Ležaić, M.; Fadley, C. S.; Drube, W.; Müller, M.

doi:10.1038/srep22912

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep22912· OSTI ID:1624824

Caspers, C. ^[1]; Gloskovskii, A. ^[2]; Gorgoi, M. ^[3]; Besson, C. ^[4]; Luysberg, M. ^[5]; Rushchanskii, K. Z. ^[6]; Ležaić, M. ^[6]; Fadley, C. S. ^[7]; Drube, W. ^[2]; Müller, M. ^[8]

Peter Grünberg Institut (PGI-6), Jülich (Germany); JARA Jülich-Aachen Research Alliance, Jülich (Germany); DOE/OSTI
DESY Photon Science, Deutsches Elektronen Synchrotron, Hamburg (Germany)
Helmholtz-Zentrum für Materialien und Energie, BESSY II, Berlin (Germany)
Peter Grünberg Institut (PGI-6), Jülich (Germany)
Peter Grünberg Institut (PGI-5) und Ernst Ruska-Centrum für Mikroskopie und Spektroskopie mit Elektronen, Jülich (Germany)
Peter Grünberg Institut (PGI-1), Jülich (Germany); ARA Jülich-Aachen Research Alliance, Jülich (Germany)
Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Peter Grünberg Institut (PGI-6), Jülich (Germany); JARA Jülich-Aachen Research Alliance, Jülich (Germany); Univ. Duisburg-Essen (Germany). Fakultät für Physik und Center for Nanointegration CENIDE

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii)the application of oxygen-protective Eu monolayers–without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime–and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1624824

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Phonon confinement and spin-phonon coupling in tensile-strained ultrathin EuO films Pradip, Ramu; Piekarz, Przemysław; Merkel, Dániel G. Nanoscale, Vol. 11, Issue 22 https://doi.org/10.1039/c9nr01931f	journal	January 2019
Band offset modulation in Si-EuO heterostructures via controlled interface formation Li, Wente; Posadas, Agham B.; Demkov, Alexander A. Physical Review B, Vol. 100, Issue 15 https://doi.org/10.1103/physrevb.100.155303	journal	October 2019
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Phonon confinement and spin-phonon coupling in tensile-strained ultrathin EuO films Pradip, Ramu; Piekarz, Przemysław; Merkel, Dániel G. Karlsruhe https://doi.org/10.5445/ir/1000095379	text	January 2019

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