Lattice strain effects on the optical properties of MoS2 nanosheets

Yang, Lei; Cui, Xudong; Zhang, Jingyu; Wang, Kan; Shen, Meng; Zeng, Shuangshuang; Dayeh, Shadi A.; Feng, Liang; Xiang, Bin

doi:10.1038/srep05649

Lattice strain effects on the optical properties of MoS₂ nanosheets

Journal Article · Thu Jul 10 00:00:00 EDT 2014 · Scientific Reports

DOI:https://doi.org/10.1038/srep05649· OSTI ID:1624729

Yang, Lei ^[1]; Cui, Xudong ^[2]; Zhang, Jingyu ^[3]; Wang, Kan ^[2]; Shen, Meng ^[4]; Zeng, Shuangshuang ^[4]; Dayeh, Shadi A. ^[5]; Feng, Liang ^[6]; Xiang, Bin ^[4]

Univ. of Science and Technology of China, Hefei, Anhui (China). Chinese Academy of Sciences (CAS) Key Lab. of Materials for Energy Conversion, Dept. of Materials Science and Engineering; DOE/OSTI
China Academy of Engineering Physics (CAEP), Sichuan (China). Research Center Laser Fusion, Science and Technology on Plasma Physics Lab.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Univ. of Science and Technology of China, Hefei, Anhui (China). Chinese Academy of Sciences (CAS) Key Lab. of Materials for Energy Conversion, Dept. of Materials Science and Engineering
Univ. of California, San Diego, La Jolla, CA (United States). Dept. of Electrical and Computer Engineering
State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of electrical Engineering

‘‘Strain engineering’’ in functional materials has been widely explored to tailor the physical properties of electronic materials and improve their electrical and/or optical properties. Here, we exploit both in plane and out of plane uniaxial tensile strains in MoS₂ to modulate its band gap and engineer its optical properties. We utilize X-ray diffraction and cross-sectional transmission electron microscopy to quantify the strains in the as-synthesized MoS₂ nanosheets and apply measured shifts of Raman-active modes to confirm lattice strain modification of both the out-of-plane and in-plane phonon vibrations of the MoS₂ nanosheets. The induced band gap evolution due to in-plane and out-of-plane tensile stresses is validated by photoluminescence (PL) measurements, promising a potential route for unprecedented manipulation of the physical, electrical and optical properties of MoS₂.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE; National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1624729

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 4; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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