Theoretical study on strain induced variations in electronic properties of 2H-MoS{sub 2} bilayer sheets
- Computational and Information Sciences Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)
- Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
The strain dependence of the electronic properties of bilayer sheets of 2H-MoS{sub 2} is studied using ab initio simulations based on density functional theory. An indirect band gap for bilayer MoS{sub 2} is observed for all variations of strain along the basal plane. Several transitions for the indirect band gap are observed for various strains for the bilayer structure. The variation of the band gap and the carrier effective masses for the holes and the electrons for the bilayer MoS{sub 2} structure under conditions of uniaxial strain, biaxial strain, as well as uniaxial stress is investigated.
- OSTI ID:
- 22283258
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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