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On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressure

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep02571· OSTI ID:1624645
 [1];  [2]
  1. Stevens Institute of Technology, Hoboken, NJ (United States); DOE/OSTI
  2. Stevens Institute of Technology, Hoboken, NJ (United States)
We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical curvilinear graphene domains specifically on Cu{100} surface orientations at atmospheric pressure. We utilize electron backscattered diffraction, scanning electron microscopy and Raman spectroscopy to determine an as-yet unexplored growth mode producing such a shape and demonstrate how its growth and morphology are dependent on the underlying Cu crystal structure especially in the high CH4:H2 regime. We show that both monolayer and bilayer curvilinear domains are grown on Cu{100} surfaces; furthermore, we show that characteristic atmospheric pressure CVD hexagonal domains are grown on all other Cu facets with an isotropic growth rate which is more rapid than that on Cu{100}. These findings indicate that the Cu-graphene complex is predominant mechanistically at atmospheric pressure, which is an important step towards tailoring graphene properties via substrate engineering.
Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-98CH10886
OSTI ID:
1624645
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 3; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (1)

Surface Diffusion Directed Growth of Anisotropic Graphene Domains on Different Copper Lattices journal February 2016

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