On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressure
- Stevens Institute of Technology, Hoboken, NJ (United States); DOE/OSTI
- Stevens Institute of Technology, Hoboken, NJ (United States)
We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical curvilinear graphene domains specifically on Cu{100} surface orientations at atmospheric pressure. We utilize electron backscattered diffraction, scanning electron microscopy and Raman spectroscopy to determine an as-yet unexplored growth mode producing such a shape and demonstrate how its growth and morphology are dependent on the underlying Cu crystal structure especially in the high CH4:H2 regime. We show that both monolayer and bilayer curvilinear domains are grown on Cu{100} surfaces; furthermore, we show that characteristic atmospheric pressure CVD hexagonal domains are grown on all other Cu facets with an isotropic growth rate which is more rapid than that on Cu{100}. These findings indicate that the Cu-graphene complex is predominant mechanistically at atmospheric pressure, which is an important step towards tailoring graphene properties via substrate engineering.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1624645
- Journal Information:
- Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 3; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Surface Diffusion Directed Growth of Anisotropic Graphene Domains on Different Copper Lattices
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journal | February 2016 |
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