Influence of substrate misorientation on the optical properties of Mg-doped GaN

Liu, Hanxiao; Su, Po-Yi; Wu, Zhihao; Liu, Rong; Ponce, Fernando A.

doi:10.1063/5.0001482

Influence of substrate misorientation on the optical properties of Mg-doped GaN

Journal Article · Fri May 15 00:00:00 EDT 2020 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0001482· OSTI ID:1618950

; ; Wu, Zhihao; Liu, Rong;

The GaN substrate miscut angle has a significant effect on the optical properties of Mg-doped GaN grown by metal-organic chemical vapor deposition. We have studied the optical properties of epilayers grown on c-plane GaN wafers with nominal miscut angles of 0.3° and 4° toward the [11¯00] direction. Periodic surface steps are observed in thin films grown on 0.3° miscut substrates. The step separation and height, as well as the surface roughness, increase with layer thickness, leading to a decrease in Mg doping efficiency. For films grown on 4° miscut substrates, step bunching causes the formation of visually observable wavy features on the film surface with strong spatial variations in cathodoluminescence characteristics, indicating a significant effect of surface morphology on the nature of Mg incorporation and p-type characteristics.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1618950

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 127; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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