Valence band structure and Mn 3d derived density of states in epitaxially grown zinc-blende MnSe

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586492· OSTI ID:161744

Bressler, P R; Kloepper, Th; Gumlich, H E ^[1]

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1. Technische Universitaet Berlin (Germany)

Zinc-blende MnSe films (0-8 monolayers) were grown by molecular-beam epitaxy on ZnSe(100). Angle-resolved photoelectron spectroscopy and resonantly enhanced photoelectron spectroscopy were performed. The experimental valence band structure along {Gamma}-X and Mn 3d-derived partial density of states (Mn 3d PDOS) were determined for the first time. The width of the valence band region was found to be 0.2 eV larger in MnSe than in ZnSe. Emission between 1 and 3.5 eV binding energy (BE) is assigned to MnSe sp-derived bands. The dispersion is weaker than in ZnSe and is related to hybridization with Mn 3d states. Emission between 4 and 5 eV, BE is ascribed to flat Mn 3d-derived bands and to high DOS emission from other regions in the Brillouin zone. Se 3d core emission shifts to 0.6{+-}0.1 eV higher BE as a function of MnSe coverage. By analysis of the Fano-like Mn 3p-3d resonance near hv=50 eV three contributions to the Mn 3d PDOS are derived (denoted M, at 3.4 eV BE, V, at 1.1 eV BE and S, near 7 eV BE, respectively). The relative branching ratios for the latter two features to the first (V/M and S/M) grow monotonically as a function of thin MnSe coverage reaching bulk Zn{sub l-x}Mn{sub x}Se values for thicker films. This behavior is likely due to strain and distortion of the tetrahedral symmetry at the interface. 26 refs., 7 figs.

• OSTI ID: 161744
• Report Number(s): CONF-930115--; CNN: Contract 05414CB17
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BAND THEORY
BINDING ENERGY
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
HYBRIDIZATION
MANGANESE SELENIDES
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
RESONANCE
VALENCE
ZINC ALLOYS