MnSe phase segregation during heteroepitaxy of Mn doped Ga{sub 2}Se{sub 3} on Si(001).
Heteroepitaxial thin films of Mn-doped Ga{sub 2}Se{sub 3} are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm, after which oriented islands with flat tops are observed by scanning tunneling microscopy. In contrast with the bulk phase diagram, which predicts MnGa{sub 2}Se{sub 4} precipitates, the precipitates are identified by bond length measurements from extended x-ray absorption fine structure as rocksalt MnSe. This difference is attributed to superior lattice matching of MnSe to the substrate, and an epitaxial relationship between the MnSe and Si substrate is inferred.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; NSF
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 977363
- Report Number(s):
- ANL/XSD/JA-65336
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: Dec. 14, 2009 Vol. 95; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
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