Effect of surface reconstruction on Fermi-level pinning in the Sn on Si(111) system
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Univ. of Wales College of Cardiff (United Kingdom); and others
We have performed detailed photoemission studies on the Si(111)({radical}3 X {radical}3)R30{degrees}-Sn and Si(111)(2{radical}3 X 2{radical}3)R30{degrees}-Sn reconstructed surfaces. Band bending is observed in both cases resulting in n-type Schottky barrier heights of (0.66{+-}0.09) and (0.99{+-}0.10) eV, respectively. In parallel, theoretical calculations using the self-consistent tight binding method in the extended Huckel approximation have been performed to determine the electronic structure and barrier heights at these reconstructed surfaces. The difference in barrier heights is found to be in excellent agreement with experiment. 21 refs., 4 figs., 2 tabs.
- OSTI ID:
- 161735
- Report Number(s):
- CONF-930115--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
N-butane hydrogenolysis at Sn/Pt(111) surface alloys
Reconstruction of the InSb (111)In surface as a result of sulfur adsorption
A new catalysis for benzene production from acetylene under UHV conditions: Sn/Pt(111) surface alloys
Journal Article
·
Sat Oct 01 00:00:00 EDT 1994
· Journal of Catalysis
·
OSTI ID:98936
Reconstruction of the InSb (111)In surface as a result of sulfur adsorption
Journal Article
·
Tue May 15 00:00:00 EDT 2007
· Semiconductors
·
OSTI ID:21088067
A new catalysis for benzene production from acetylene under UHV conditions: Sn/Pt(111) surface alloys
Journal Article
·
Tue Jan 26 23:00:00 EST 1993
· Journal of the American Chemical Society; (United States)
·
OSTI ID:6539172