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Reconstruction of the InSb (111)In surface as a result of sulfur adsorption

Journal Article · · Semiconductors
;  [1]
  1. Shizuouka University, Nano-Device Process Lab, Research Institute of Electronics (Japan)
The variation in reconstruction in the InSb (111)In surface during adsorption of sulfur and annealing in ultrahigh vacuum was investigated by methods of low-energy electron diffraction and Auger electron spectroscopy. It is shown that evolution of reconstruction of the InSb (111)In surface substantially depends on the starting thickness of the adsorbed S layer on the surface. If the thickness of the S layer is only slightly larger than that of the monolayer, reconstruction (1 x 1) is formed on the surface, which transforms into reconstruction (2 x 2) during the subsequent annealing. If the S layer is several monolayers thick, this layer is initially amorphous. Annealing of such a surface at 315-325 deg. C can lead to the formation of reconstruction ({radical}3 x {radical}3)-R30 deg., which transforms into reconstruction (2 x 2) at a higher temperature. This reconstruction is retained during further annealing until the S atoms vanish from the surface completely. It is shown for the first time that the reconstruction ({radical}3 x {radical}3)-R30 deg. can form during adsorption of chalcogenide atoms on the III-V (111)III surface.
OSTI ID:
21088067
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 41; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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