Scanning tunneling microscopy of doping and compositional III-V homo- and heterostructures

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586960· OSTI ID:161729

Gwo, S; Chao, K J; Smith, A R ^[1]

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1. Univ. of Texas, Austin, TX (United States); and others

Scanning tunneling microscopy (STM) was used to study the (110) cross-sectional surfaces of molecular-beam epitaxially grown III-V homo- and heterostructures, which include GaAs multiple p-n junctions, (InGa)As/GaAs strained-layer multiple quantum wells, and (AlGa)As/GaAs heterojunctions. Both doping and compositional effects can be resolved by the topographic contrasts of constant-current STM images. The samples were prepared by either cleaving in ultrahigh vacuum or cleaving ex situ followed by sulfide [(NH{sub 4}){sub 2}S] passivation. Sulfide passivated samples have been found to be advantageous for the measurements of scanning tunneling spectroscopy. 20 refs., 5 figs.

• OSTI ID: 161729
• Report Number(s): CONF-930115--; CNN: Contract AFOSR F49620-92-C-0027; Grant CHE8920120
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
IMAGES
MICROSCOPY
P-N JUNCTIONS
PASSIVATION
SURFACES
ULTRAHIGH VACUUM