Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence
Journal Article
·
· Japanese Journal of Applied Physics
- Texas State Univ., San Marcos, TX (United States); Texas State University
- Texas State Univ., San Marcos, TX (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Cheng Kung Univ., Tainan (Taiwan)
Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1-xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x=0.35 and x=0.55 as well as a graded composition profile having a minimum of x=0.25. Both the open circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. Finally, to quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States); Texas State Univ., San Marcos, TX (United States)
- Sponsoring Organization:
- Ministry of Science and Technology, Taiwan; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- Grant/Contract Number:
- AC36-08GO28308; EE0007541
- OSTI ID:
- 1615907
- Alternate ID(s):
- OSTI ID: 1659904
- Report Number(s):
- NREL/JA-5K00-76618
- Journal Information:
- Japanese Journal of Applied Physics, Journal Name: Japanese Journal of Applied Physics Journal Issue: 5 Vol. 59; ISSN 0021-4922
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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