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Absolute photoluminescence intensity in thin film solar cells

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.5064798· OSTI ID:1497989
 [1];  [1];  [2];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
A calculation is presented for the direct conversion of a measured luminescence signal to the implied open circuit voltage. The effects of re-absorption, spectral dependence, and interference with front and back interfaces are all included, so long as the optical properties of the structure are known. The method is validated through a comparison of the terminal open-circuit voltage with the photoluminescence intensity of Cu(In,Ga)Se2 solar cells, each as a function of illumination intensity.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Texas State Univ., San Marcos, TX (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
AC36-08GO28308; EE0007541
OSTI ID:
1497989
Alternate ID(s):
OSTI ID: 1579311
Report Number(s):
NREL/JA--5K00-73399
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 125; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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