Thermal conductivity of GaN, 71GaN, and SiC from 150 K to 850 K

Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G.

doi:10.1103/physrevmaterials.3.014601

Title: Thermal conductivity of GaN, ⁷¹GaN, and SiC from 150 K to 850 K

Journal Article · Thu Jan 03 00:00:00 EST 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.3.014601· OSTI ID:1613744

Zheng, Qiye ^[1]; Li, Chunhua ^[2]; Rai, Akash ^[1]; Leach, Jacob H. ^[3]; Broido, David A. ^[2]; Cahill, David G. ^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States)
Boston College, Chestnut Hill, MA (United States)
Kyma Technologies, Inc., Raleigh, NC (United States)

The thermal conductivity (Λ) of wide-band-gap semiconductors GaN and SiC is critical for their application in power devices and optoelectronics. Here, we report time-domain thermoreflectance measurements of Λ in GaN, ⁷¹GaN, and SiC between 150 and 850 K. The samples include bulk c- and m-plane wurtzite GaN grown by hydride vapor phase epitaxy (HVPE) and ammonothermal methods; homoepitaxial natural isotope abundant GaN and isotopically enriched ⁷¹GaN layers with thickness of 6–12 μm grown on c-, m-, and a-plane GaN substrates grown by HVPE; and bulk crystals of 4H and 6H SiC. In low dislocation density (<10⁷ cm^–2) bulk and homoepitaxial GaN, Λ is insensitive to crystal orientation and doping concentration (for doping <10¹⁹ cm^–3); Λ ≈ 200 W m^–1 K^–1 at 300 K and ≈ 50 W m^–1 K^–1 at 850 K. In ⁷¹GaN epilayers at 300 K, Λ is ≈15% higher than in GaN with natural isotope abundance. The measured temperature dependence of Λ in GaN is stronger than predicted by first-principles based solutions of the Boltzmann transport equation that include anharmonicity up to third order. This discrepancy between theory and experiment suggests possible significant contributions to the thermal resistivity from higher-order phonon scattering that involve interactions between more than three phonons. The measured Λ of 4H and 6H SiC is anisotropic, in good agreement with first-principles calculations, and larger than GaN by a factor of ≈1.5 in the temperature range 300 < T < 850K. Furthermore, this paper provides benchmark knowledge about the thermal conductivity in wide-band-gap semiconductors of GaN, ⁷¹GaN, and SiC over a wide temperature range for their applications in power electronics and optoelectronics.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000876

OSTI ID:: 1613744

Alternate ID(s):: OSTI ID: 1489429

Journal Information:: Physical Review Materials, Vol. 3, Issue 1; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 76 works

Citation information provided by
Web of Science

References (129)

Thermal diffusivity of isotopically enriched ${}^{12}C$ diamond Anthony, T. R.; Banholzer, W. F.; Fleischer, J. F. Physical Review B, Vol. 42, Issue 2 https://doi.org/10.1103/PhysRevB.42.1104	journal	July 1990
High temperature heat contents of III-V semiconductor systems Itagaki, K.; Yamaguchi, K. Thermochimica Acta, Vol. 163 https://doi.org/10.1016/0040-6031(90)80374-8	journal	June 1990
Intrinsic lattice thermal conductivity of semiconductors from first principles Broido, D. A.; Malorny, M.; Birner, G. Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822891	journal	December 2007
Thermal transport through GaN–SiC interfaces from 300 to 600 K Ziade, Elbara; Yang, Jia; Brummer, Gordie Applied Physics Letters, Vol. 107, Issue 9 https://doi.org/10.1063/1.4930104	journal	August 2015
Precise measurement of equation-of-state and elastic properties for GaN up to 16GPa Tsuchiya, T.; Kawamura, K.; Ohtaka, O. Solid State Communications, Vol. 121, Issue 9-10 https://doi.org/10.1016/S0038-1098(01)00492-6	journal	March 2002
The 2018 GaN power electronics roadmap Amano, H.; Baines, Y.; Beam, E. Journal of Physics D: Applied Physics, Vol. 51, Issue 16 https://doi.org/10.1088/1361-6463/aaaf9d	journal	March 2018
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC Müller, Stephan G.; Eckstein, Robert; Fricke, J. Materials Science Forum, Vol. 264-268 https://doi.org/10.4028/www.scientific.net/MSF.264-268.623	journal	February 1998
Raman scattering determination of structures for SiC polytypes: Quantitative evaluation with a revised model of lattice dynamics Nakashima, S.; Tahara, K. Physical Review B, Vol. 40, Issue 9 https://doi.org/10.1103/PhysRevB.40.6339	journal	September 1989
Thermal conductivity of isotopically pure and Ge-doped Si epitaxial layers from $300 to 550 K$ Cahill, David G.; Watanabe, Fumiya Physical Review B, Vol. 70, Issue 23 https://doi.org/10.1103/PhysRevB.70.235322	journal	December 2004
Analysis of heat flow in layered structures for time-domain thermoreflectance Cahill, David G. Review of Scientific Instruments, Vol. 75, Issue 12 https://doi.org/10.1063/1.1819431	journal	December 2004
Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode in n ‐type 4H– and 6H–SiC Harima, Hiroshi; Nakashima, Shin‐ichi; Uemura, Tomoki Journal of Applied Physics, Vol. 78, Issue 3 https://doi.org/10.1063/1.360174	journal	August 1995
Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon Carbide Klein, Miles V.; Ganguly, B. N.; Colwell, Priscilla J. Physical Review B, Vol. 6, Issue 6 https://doi.org/10.1103/PhysRevB.6.2380	journal	September 1972
Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes $3 C$ , $4 H$ , $6 H$ , $15 R$ , and $21 R$ Feldman, D. W.; Parker, James H.; Choyke, W. J. Physical Review, Vol. 173, Issue 3 https://doi.org/10.1103/PhysRev.173.787	journal	September 1968
Defects in Single Crystalline Ammonothermal Gallium Nitride Suihkonen, Sami; Pimputkar, Siddha; Sintonen, Sakari Advanced Electronic Materials, Vol. 3, Issue 6 https://doi.org/10.1002/aelm.201600496	journal	March 2017
Spectral concentration of thermal conductivity in GaN—A first-principles study Garg, Jivtesh; Luo, Tengfei; Chen, Gang Applied Physics Letters, Vol. 112, Issue 25 https://doi.org/10.1063/1.5026903	journal	June 2018
Uncertainty analysis of thermoreflectance measurements Yang, Jia; Ziade, Elbara; Schmidt, Aaron J. Review of Scientific Instruments, Vol. 87, Issue 1 https://doi.org/10.1063/1.4939671	journal	January 2016
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence Florescu, D. I.; Asnin, V. M.; Pollak, Fred H. Journal of Applied Physics, Vol. 88, Issue 6 https://doi.org/10.1063/1.1289072	journal	September 2000
High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process Shibata, Hiroyuki; Waseda, Yoshio; Ohta, Hiromichi MATERIALS TRANSACTIONS, Vol. 48, Issue 10 https://doi.org/10.2320/matertrans.MRP2007109	journal	January 2007
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN Barker, A. S.; Ilegems, M. Physical Review B, Vol. 7, Issue 2 https://doi.org/10.1103/PhysRevB.7.743	journal	January 1973
Phonon transport unveils the prevalent point defects in GaN Katre, Ankita; Carrete, Jesús; Wang, Tao Physical Review Materials, Vol. 2, Issue 5 https://doi.org/10.1103/PhysRevMaterials.2.050602	journal	May 2018
Two-tint pump-probe measurements using a femtosecond laser oscillator and sharp-edged optical filters Kang, Kwangu; Koh, Yee Kan; Chiritescu, Catalin Review of Scientific Instruments, Vol. 79, Issue 11 https://doi.org/10.1063/1.3020759	journal	November 2008
Limits to Fourier theory in high thermal conductivity single crystals Wilson, R. B.; Cahill, David G. Applied Physics Letters, Vol. 107, Issue 20 https://doi.org/10.1063/1.4935987	journal	November 2015
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition Rosner, S. J.; Carr, E. C.; Ludowise, M. J. Applied Physics Letters, Vol. 70, Issue 4 https://doi.org/10.1063/1.118322	journal	January 1997
Thermal Conductivity and Phonon Resonance Scattering Pohl, R. O. Physical Review Letters, Vol. 8, Issue 12 https://doi.org/10.1103/PhysRevLett.8.481	journal	June 1962
Thermal Conductivity and Large Isotope Effect in GaN from First Principles Lindsay, L.; Broido, D. A.; Reinecke, T. L. Physical Review Letters, Vol. 109, Issue 9 https://doi.org/10.1103/PhysRevLett.109.095901	journal	August 2012
Polarized Raman spectra in GaN Azuhata, T.; Sota, T.; Suzuki, K. Journal of Physics: Condensed Matter, Vol. 7, Issue 10 https://doi.org/10.1088/0953-8984/7/10/002	journal	March 1995
Heat capacity and phonon mean free path of wurtzite GaN Danilchenko, B. A.; Paszkiewicz, T.; Wolski, S. Applied Physics Letters, Vol. 89, Issue 6 https://doi.org/10.1063/1.2335373	journal	August 2006
Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles Protik, Nakib Haider; Katre, Ankita; Lindsay, Lucas Materials Today Physics, Vol. 1 https://doi.org/10.1016/j.mtphys.2017.05.004	journal	June 2017
Theoretical aspects of the minority carrier recombination at dislocations in semiconductors Farvacque, Jean-Louis Materials Science and Engineering: B, Vol. 42, Issue 1-3 https://doi.org/10.1016/S0921-5107(96)01691-1	journal	December 1996
Thermal conductivity of lateral epitaxial overgrown GaN films Luo, C. -Y.; Marchand, H.; Clarke, D. R. Applied Physics Letters, Vol. 75, Issue 26 https://doi.org/10.1063/1.125566	journal	December 1999
The temperature dependence of the thermal conductivity of single crystal GaN films Luo, C.; Clarke, D. R.; Dryden, J. R. Journal of Electronic Materials, Vol. 30, Issue 3 https://doi.org/10.1007/s11664-001-0007-1	journal	March 2001
Electrical Resistivity of Aluminum and Manganese Desai, P. D.; James, H. M.; Ho, C. Y. Journal of Physical and Chemical Reference Data, Vol. 13, Issue 4 https://doi.org/10.1063/1.555725	journal	October 1984
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds Amilusik, M.; Sochacki, T.; Lucznik, B. Journal of Crystal Growth, Vol. 403 https://doi.org/10.1016/j.jcrysgro.2014.06.012	journal	October 2014
High temperature enthalpy and heat capacity of GaN Leitner, J.; Strejc, A.; Sedmidubský, D. Thermochimica Acta, Vol. 401, Issue 2 https://doi.org/10.1016/S0040-6031(02)00547-6	journal	May 2003
Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation Simon, Roland B.; Anaya, Julian; Kuball, Martin Applied Physics Letters, Vol. 105, Issue 20 https://doi.org/10.1063/1.4901967	journal	November 2014
Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy Robins, L. H.; Horneber, E.; Sanford, N. A. Journal of Applied Physics, Vol. 120, Issue 12 https://doi.org/10.1063/1.4963291	journal	September 2016
Thermal Expansion of the Hexagonal (6H) Polytype of Silicon Carbide Li, Z.; Bradt, R. C. Journal of the American Ceramic Society, Vol. 69, Issue 12 https://doi.org/10.1111/j.1151-2916.1986.tb07385.x	journal	December 1986
Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride Wu, Xufei; Lee, Jonghoon; Varshney, Vikas Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep22504	journal	March 2016
Selected Electrical Resistivity Values for the Platinum Group of Metals Part I: Palladium and Platinum Arblaster, John W. Johnson Matthey Technology Review, Vol. 59, Issue 3 https://doi.org/10.1595/205651315X688091	journal	July 2015
Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin Physical Review B, Vol. 96, Issue 16 https://doi.org/10.1103/PhysRevB.96.161201	journal	October 2017
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction Chierchia, R.; Böttcher, T.; Heinke, H. Journal of Applied Physics, Vol. 93, Issue 11 https://doi.org/10.1063/1.1571217	journal	June 2003
Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping: Growth of SiC bulk crystals for application in power electronic devices… Wellmann, Peter; Neubauer, Georg; Fahlbusch, Lars Crystal Research and Technology, Vol. 50, Issue 1 https://doi.org/10.1002/crat.201400216	journal	September 2014
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control Kuball, M. Surface and Interface Analysis, Vol. 31, Issue 10 https://doi.org/10.1002/sia.1134	journal	January 2001
Curvature and bow of bulk GaN substrates Foronda, Humberto M.; Romanov, Alexey E.; Young, Erin C. Journal of Applied Physics, Vol. 120, Issue 3 https://doi.org/10.1063/1.4959073	journal	July 2016
First-principle-based full-dispersion Monte Carlo simulation of the anisotropic phonon transport in the wurtzite GaN thin film Wu, Ruikang; Hu, Run; Luo, Xiaobing Journal of Applied Physics, Vol. 119, Issue 14 https://doi.org/10.1063/1.4945776	journal	April 2016
Thermal conductivity of bulk and nanowire Mg $_{2}$ Si $_{x}$ Sn $_{1 - x}$ alloys from first principles Li, Wu; Lindsay, L.; Broido, D. A. Physical Review B, Vol. 86, Issue 17 https://doi.org/10.1103/PhysRevB.86.174307	journal	November 2012
Phonon‐electron scattering in single crystal silicon carbide Morelli, Donald T.; Heremans, Joseph P.; Beetz, Charles P. Applied Physics Letters, Vol. 63, Issue 23 https://doi.org/10.1063/1.110229	journal	December 1993
Waveguide study and refractive indices of GaN:Mg epitaxial film Zhang, H. Y.; Schurman, M.; Feng, Z. C. Optics Letters, Vol. 21, Issue 19 https://doi.org/10.1364/OL.21.001529	journal	January 1996
Low energy electron beam induced damage on InGaN/GaN quantum well structure Nykänen, H.; Mattila, P.; Suihkonen, S. Journal of Applied Physics, Vol. 109, Issue 8 https://doi.org/10.1063/1.3574655	journal	April 2011
Isotopic and Other Types of Thermal Resistance in Germanium Geballe, T. H.; Hull, G. W. Physical Review, Vol. 110, Issue 3 https://doi.org/10.1103/PhysRev.110.773	journal	May 1958
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD Hite, J. K.; Anderson, T. J.; Luna, L. E. Journal of Crystal Growth, Vol. 498 https://doi.org/10.1016/j.jcrysgro.2018.06.032	journal	September 2018
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices Roccaforte, Fabrizio; Fiorenza, Patrick; Greco, Giuseppe Microelectronic Engineering, Vol. 187-188 https://doi.org/10.1016/j.mee.2017.11.021	journal	February 2018
Elastic constants of GaN between 10 and 305 K Adachi, K.; Ogi, H.; Nagakubo, A. Journal of Applied Physics, Vol. 119, Issue 24 https://doi.org/10.1063/1.4955046	journal	June 2016
Structure and Heat Capacity of Wurtzite GaN from 113 to 1073 K Chen, Xiao-long; Lan, Yu-cheng; Liang, Jing-kui Chinese Physics Letters, Vol. 16, Issue 2 https://doi.org/10.1088/0256-307X/16/2/011	journal	February 1999
Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy Yamane, Keisuke; Matsubara, Tohoru; Yamamoto, Takeshi Journal of Applied Physics, Vol. 119, Issue 4 https://doi.org/10.1063/1.4940914	journal	January 2016
Spatial characterization of doped SiC wafers by Raman spectroscopy Burton, J. C.; Sun, L.; Pophristic, M. Journal of Applied Physics, Vol. 84, Issue 11 https://doi.org/10.1063/1.368947	journal	December 1998
The intrinsic thermal conductivity of AIN Slack, Glen A.; Tanzilli, R. A.; Pohl, R. O. Journal of Physics and Chemistry of Solids, Vol. 48, Issue 7 https://doi.org/10.1016/0022-3697(87)90153-3	journal	January 1987
Heat capacity of crystalline GaN Zięborak-Tomaszkiewicz, Iwona; Utzig, Ewa; Gierycz, P. Journal of Thermal Analysis and Calorimetry, Vol. 91, Issue 1 https://doi.org/10.1007/s10973-006-8317-4	journal	July 2007
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates Killat, N.; Montes, M.; Pomeroy, J. W. IEEE Electron Device Letters, Vol. 33, Issue 3 https://doi.org/10.1109/LED.2011.2179972	journal	March 2012
Heat capacity of $α − Ga N$ : Isotope effects Kremer, R. K.; Cardona, M.; Schmitt, E. Physical Review B, Vol. 72, Issue 7 https://doi.org/10.1103/PhysRevB.72.075209	journal	August 2005
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Waltereit, P.; Brandt, O.; Trampert, A. Nature, Vol. 406, Issue 6798 https://doi.org/10.1038/35022529	journal	August 2000
Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments Wilson, R. B.; Cahill, David G. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6075	journal	October 2014
Properties of GaN and related compounds studied by means of Raman scattering Harima, Hiroshi Journal of Physics: Condensed Matter, Vol. 14, Issue 38 https://doi.org/10.1088/0953-8984/14/38/201	journal	September 2002
“Nanoparticle-in-Alloy” Approach to Efficient Thermoelectrics: Silicides in SiGe Mingo, N.; Hauser, D.; Kobayashi, N. P. Nano Letters, Vol. 9, Issue 2 https://doi.org/10.1021/nl8031982	journal	February 2009
Unusual high thermal conductivity in boron arsenide bulk crystals Tian, Fei; Song, Bai; Chen, Xi Science, Vol. 361, Issue 6402 https://doi.org/10.1126/science.aat7932	journal	July 2018
Accurate dependence of gallium nitride thermal conductivity on dislocation density Mion, C.; Muth, J. F.; Preble, E. A. Applied Physics Letters, Vol. 89, Issue 9 https://doi.org/10.1063/1.2335972	journal	August 2006
Anisotropic thermal conductivity of 4H and 6H silicon carbide measured using time-domain thermoreflectance Qian, Xin; Jiang, Puqing; Yang, Ronggui Materials Today Physics, Vol. 3 https://doi.org/10.1016/j.mtphys.2017.12.005	journal	December 2017
Bulk GaN crystals grown by HVPE Fujito, Kenji; Kubo, Shuichi; Nagaoka, Hirobumi Journal of Crystal Growth, Vol. 311, Issue 10 https://doi.org/10.1016/j.jcrysgro.2009.01.046	journal	May 2009
Neutral and charged embedded clusters of Mn in doped GaN from first principles Cui, X. Y.; Delley, B.; Freeman, A. J. Physical Review B, Vol. 76, Issue 4 https://doi.org/10.1103/PhysRevB.76.045201	journal	July 2007
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes Rounds, Robert; Sarkar, Biplab; Sochacki, Tomasz Journal of Applied Physics, Vol. 124, Issue 10 https://doi.org/10.1063/1.5047531	journal	September 2018
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Temperature dependence of the thermal expansion of GaN Roder, C.; Einfeldt, S.; Figge, S. Physical Review B, Vol. 72, Issue 8 https://doi.org/10.1103/PhysRevB.72.085218	journal	August 2005
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives Zajac, M.; Kucharski, R.; Grabianska, K. Progress in Crystal Growth and Characterization of Materials, Vol. 64, Issue 3 https://doi.org/10.1016/j.pcrysgrow.2018.05.001	journal	September 2018
Size dictated thermal conductivity of GaN Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J. Journal of Applied Physics, Vol. 120, Issue 9 https://doi.org/10.1063/1.4962010	journal	September 2016
Thermal conductivity of germanium crystals with different isotopic compositions Asen-Palmer, M.; Bartkowski, K.; Gmelin, E. Physical Review B, Vol. 56, Issue 15 https://doi.org/10.1103/PhysRevB.56.9431	journal	October 1997
Thermal conductivity of diamond between 170 and 1200 K and the isotope effect Olson, J. R.; Pohl, R. O.; Vandersande, J. W. Physical Review B, Vol. 47, Issue 22 https://doi.org/10.1103/PhysRevB.47.14850	journal	June 1993
Specific heat of aluminum from zero to its melting temperature and beyond. Equation for representation of the specific heat of solids Buyco, Edgar H.; Davis, Fred E. Journal of Chemical & Engineering Data, Vol. 15, Issue 4 https://doi.org/10.1021/je60047a035	journal	October 1970
Increased thermal conductivity of free-standing low-dislocation-density GaN films Liu, Weili; Balandin, Alexander A.; Lee, Changho physica status solidi (a), Vol. 202, Issue 12 https://doi.org/10.1002/pssa.200521222	journal	September 2005
Thermal conductivity and electrical properties of 6 H silicon carbide Burgemeister, E. A.; von Muench, W.; Pettenpaul, E. Journal of Applied Physics, Vol. 50, Issue 9 https://doi.org/10.1063/1.326720	journal	September 1979
Raman spectroscopic study of the electrical properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport method Peng, Yan; Xu, Xiangang; Hu, Xiaobo Journal of Applied Physics, Vol. 107, Issue 9 https://doi.org/10.1063/1.3415534	journal	May 2010
4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Balachandran, Anusha; Song, Haizheng; Sudarshan, T. S. Journal of Crystal Growth, Vol. 448 https://doi.org/10.1016/j.jcrysgro.2016.05.018	journal	August 2016
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN Perlin, P.; Camassel, J.; Knap, W. Applied Physics Letters, Vol. 67, Issue 17 https://doi.org/10.1063/1.114446	journal	October 1995
Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding Pezzagna, S.; Brault, J.; Leroux, M. Journal of Applied Physics, Vol. 103, Issue 12 https://doi.org/10.1063/1.2947598	journal	June 2008
Emerging challenges and materials for thermal management of electronics Moore, Arden L.; Shi, Li Materials Today, Vol. 17, Issue 4 https://doi.org/10.1016/j.mattod.2014.04.003	journal	May 2014
Ab initio theory of the lattice thermal conductivity in diamond Ward, A.; Broido, D. A.; Stewart, Derek A. Physical Review B, Vol. 80, Issue 12 https://doi.org/10.1103/PhysRevB.80.125203	journal	September 2009
Crystal structure refinement of AlN and GaN Schulz, Heinz; Thiemann, K. H. Solid State Communications, Vol. 23, Issue 11 https://doi.org/10.1016/0038-1098(77)90959-0	journal	September 1977
Raman Frequencies and Angular Dispersion of Polar Modes in Aluminum Nitride and Gallium Nitride Filippidis, L.; Siegle, H.; Hoffmann, A. physica status solidi (b), Vol. 198, Issue 2 https://doi.org/10.1002/pssb.2221980207	journal	December 1996
High thermal conductivity in cubic boron arsenide crystals Li, Sheng; Zheng, Qiye; Lv, Yinchuan Science, Vol. 361, Issue 6402 https://doi.org/10.1126/science.aat8982	journal	July 2018
Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K) Nilsson, Ove; Mehling, Harald; Horn, Ronny High Temperatures-High Pressures, Vol. 29, Issue 1 https://doi.org/10.1068/htec142	journal	January 1997
Pseudopotentials for high-throughput DFT calculations Garrity, Kevin F.; Bennett, Joseph W.; Rabe, Karin M. Computational Materials Science, Vol. 81 https://doi.org/10.1016/j.commatsci.2013.08.053	journal	January 2014
Scaling Analysis of Performance Tradeoffs in Electronics Cooling Green, C. E.; Fedorov, A. G.; Joshi, Y. K. IEEE Transactions on Components and Packaging Technologies, Vol. 32, Issue 4 https://doi.org/10.1109/TCAPT.2009.2013720	journal	December 2009
Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds Bockowski, M.; Iwinska, M.; Amilusik, M. Semiconductor Science and Technology, Vol. 31, Issue 9 https://doi.org/10.1088/0268-1242/31/9/093002	journal	August 2016
Phonon Scattering in Semiconductors From Thermal Conductivity Studies Holland, M. G. Physical Review, Vol. 134, Issue 2A https://doi.org/10.1103/PhysRev.134.A471	journal	April 1964
Thermal expansion of the hexagonal (4 H ) polytype of SiC Li, Z.; Bradt, R. C. Journal of Applied Physics, Vol. 60, Issue 2 https://doi.org/10.1063/1.337456	journal	July 1986
Thermal conductivity of 4H-SiC single crystals Wei, Rusheng; Song, Sheng; Yang, Kun Journal of Applied Physics, Vol. 113, Issue 5 https://doi.org/10.1063/1.4790134	journal	February 2013
Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy Irmer, G.; Toporov, V. V.; Bairamov, B. H. physica status solidi (b), Vol. 119, Issue 2 https://doi.org/10.1002/pssb.2221190219	journal	October 1983
Ultrahigh thermal conductivity of isotopically enriched silicon Inyushkin, Alexander V.; Taldenkov, Alexander N.; Ager, Joel W. Journal of Applied Physics, Vol. 123, Issue 9 https://doi.org/10.1063/1.5017778	journal	March 2018
Thermal conductivity of GaN crystals in 4.2–300 K range Jeżowski, A.; Danilchenko, B. A.; Boćkowski, M. Solid State Communications, Vol. 128, Issue 2-3 https://doi.org/10.1016/S0038-1098(03)00629-X	journal	October 2003
Electronic properties in p -type GaN studied by Raman scattering Harima, H.; Inoue, T.; Nakashima, S. Applied Physics Letters, Vol. 73, Issue 14 https://doi.org/10.1063/1.122348	journal	October 1998
Exceptionally Strong Phonon Scattering by B Substitution in Cubic SiC Katre, Ankita; Carrete, Jesús; Dongre, Bonny Physical Review Letters, Vol. 119, Issue 7 https://doi.org/10.1103/PhysRevLett.119.075902	journal	August 2017
X-ray diffraction of III-nitrides Moram, M. A.; Vickers, M. E. Reports on Progress in Physics, Vol. 72, Issue 3 https://doi.org/10.1088/0034-4885/72/3/036502	journal	February 2009
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">$\Omega $ </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">$^{2}$ </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates Nie, Hui; Diduck, Quentin; Alvarez, Brian IEEE Electron Device Letters, Vol. 35, Issue 9 https://doi.org/10.1109/LED.2014.2339197	journal	September 2014
Bowing of thick GaN layers grown by HVPE using ELOG Hennig, Ch.; Richter, E.; Zeimer, U. physica status solidi (c), Vol. 3, Issue 6 https://doi.org/10.1002/pssc.200565402	journal	June 2006
X-ray diffraction analysis of the defect structure in epitaxial GaN Heinke, H.; Kirchner, V.; Einfeldt, S. Applied Physics Letters, Vol. 77, Issue 14 https://doi.org/10.1063/1.1314877	journal	October 2000
Thermal conductivity of heavily doped bulk crystals GaN:O. Free carriers contribution Jeżowski, A.; Churiukova, O.; Mucha, J. Materials Research Express, Vol. 2, Issue 8 https://doi.org/10.1088/2053-1591/2/8/085902	journal	August 2015
Raman Scattering in $6 H$ SiC Feldman, D. W.; Parker, James H.; Choyke, W. J. Physical Review, Vol. 170, Issue 3 https://doi.org/10.1103/PhysRev.170.698	journal	June 1968
Isotope scattering of large-wave-vector phonons in GaAs and InSb: Deformation-dipole and overlap-shell models Tamura, Shin-ichiro Physical Review B, Vol. 30, Issue 2 https://doi.org/10.1103/PhysRevB.30.849	journal	July 1984
Free Carrier Concentration Gradient along the c -Axis of a Freestanding Si-doped GaN Single Crystal Yoon, M.; Park, Il-Woo; Choi, H. Japanese Journal of Applied Physics, Vol. 44, Issue 2 https://doi.org/10.1143/JJAP.44.828	journal	February 2005
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond Slack, Glen A. Journal of Applied Physics, Vol. 35, Issue 12 https://doi.org/10.1063/1.1713251	journal	December 1964
Macroscopic polarization and band offsets at nitride heterojunctions Bernardini, Fabio; Fiorentini, Vincenzo Physical Review B, Vol. 57, Issue 16 https://doi.org/10.1103/PhysRevB.57.R9427	journal	April 1998
Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride Kozawa, T.; Kachi, T.; Kano, H. Journal of Applied Physics, Vol. 75, Issue 2 https://doi.org/10.1063/1.356492	journal	January 1994
The Ammonothermal Crystal Growth of Gallium Nitride—A Technique on the Up Rise Ehrentraut, Dirk; Fukuda, Tsuguo Proceedings of the IEEE, Vol. 98, Issue 7, p. 1316-1323 https://doi.org/10.1109/JPROC.2009.2029878	journal	July 2010
Some effects of oxygen impurities on AlN and GaN Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298 https://doi.org/10.1016/S0022-0248(02)01753-0	journal	December 2002
Heat Capacity of 4H-SiC Determined by Differential Scanning Calorimetry Hitova, L.; Yakimova, R.; Trifonova, E. P. Journal of The Electrochemical Society, Vol. 147, Issue 9 https://doi.org/10.1149/1.1393935	journal	January 2000
Phonon dispersion and Raman scattering in hexagonal GaN and AlN Davydov, V. Yu.; Kitaev, Yu. E.; Goncharuk, I. N. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.12899	journal	November 1998
Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri Applied Physics Express, Vol. 7, Issue 9 https://doi.org/10.7567/APEX.7.091003	journal	August 2014
Refinement of thermodynamic data on GaN Jacob, K. T.; Singh, Shwetank; Waseda, Y. Journal of Materials Research, Vol. 22, Issue 12 https://doi.org/10.1557/JMR.2007.0441	journal	December 2007
Impact of active thermal management on power electronics design Andresen, M.; Liserre, M. Microelectronics Reliability, Vol. 54, Issue 9-10 https://doi.org/10.1016/j.microrel.2014.07.069	journal	September 2014
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment Paskov, P. P.; Slomski, M.; Leach, J. H. AIP Advances, Vol. 7, Issue 9 https://doi.org/10.1063/1.4989626	journal	September 2017
High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope Asnin, V. M.; Pollak, Fred H.; Ramer, J. Applied Physics Letters, Vol. 75, Issue 9 https://doi.org/10.1063/1.124654	journal	August 1999
On the isotope effect in thermal conductivity of silicon Inyushkin, A. V.; Taldenkov, A. N.; Gibin, A. M. physica status solidi (c), Vol. 1, Issue 11 https://doi.org/10.1002/pssc.200405341	journal	November 2004
Ab initio theory of the lattice thermal conductivity in diamond Ward, Alister; Broido, David; Stewart, Derek A. Universität Regensburg https://doi.org/10.5283/epub.9466	text	January 2009
Pseudopotentials for high-throughput DFT calculations Garrity, Kevin F.; Bennett, Joseph W.; Rabe, Karin M. arXiv https://doi.org/10.48550/arxiv.1305.5973	text	January 2013
Exceptionally strong phonon scattering by B substitution in cubic SiC Katre, Ankita; Carrete, Jesús; Dongre, Bonny arXiv https://doi.org/10.48550/arxiv.1703.04996	text	January 2017
Anisotropic Thermal Conductivity of 4H and 6H Silicon Carbide Measured Using Time-Domain Thermoreflectance Qian, Xin; Jiang, Puqing; Yang, Ronggui arXiv https://doi.org/10.48550/arxiv.1712.00830	text	January 2017
Phonon transport unveils the prevalent point defects in GaN Katre, Ankita; Carrete, Jesús; Wang, Tao arXiv https://doi.org/10.48550/arxiv.1712.08124	text	January 2017
Heat capacity and phonon mean free path of wurtzite GaN Danilchenko, B. A.; Paszkiewicz, T.; Wolski, S. arXiv https://doi.org/10.48550/arxiv.cond-mat/0604270	text	January 2006
Macroscopic polarization and band offsets at nitride heterojunctions Bernardini, Fabio; Fiorentini, Vincenzo arXiv https://doi.org/10.48550/arxiv.cond-mat/9712245	text	January 1997

Cited By (6)

Thermal transport of nanoporous gallium nitride for photonic applications Zhou, Taofei; Zhang, Cheng; ElAfandy, Rami Journal of Applied Physics, Vol. 125, Issue 15 https://doi.org/10.1063/1.5083151	journal	April 2019
Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance Park, Kihoon; Bayram, Can Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5126970	journal	November 2019
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling Tang, Dao-Sheng; Qin, Guang-Zhao; Hu, Ming Journal of Applied Physics, Vol. 127, Issue 3 https://doi.org/10.1063/1.5133105	journal	January 2020
Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material Chou, Ting-Han; Lindsay, Lucas; Maznev, Alexei A. Physical Review B, Vol. 100, Issue 9 https://doi.org/10.1103/physrevb.100.094302	journal	September 2019
Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride Chen, Ke; Song, Bai; Ravichandran, Navaneetha K. Science, Vol. 367, Issue 6477 https://doi.org/10.1126/science.aaz6149	journal	January 2020
Thermal expansion coefficients of high thermal conducting BAs and BP materials Li, Sheng; Taddei, Keith M.; Wang, Xiqu Applied Physics Letters, Vol. 115, Issue 1 https://doi.org/10.1063/1.5103166	journal	July 2019

Similar Records

Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

Journal Article · Sat Dec 14 00:00:00 EST 2013 · Journal of Applied Physics · OSTI ID:1613744

Binder, J.; Korona, K. P.; Wysmołek, A.; +6 more

Observation of a two-dimensional electron gas in the AlGaN/GaN on SiC substrates

Book · Wed Dec 31 00:00:00 EST 1997 · OSTI ID:1613744

Chi, G C; Lin, C F; Cheng, H C; +3 more

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Journal Article · Wed Sep 12 00:00:00 EDT 2018 · Journal of Applied Physics · OSTI ID:1613744

Rounds, Robert; Sarkar, Biplab; Sochacki, Tomasz; +6 more

Related Subjects

36 MATERIALS SCIENCE
Materials Science
Defects
Disclinations & dislocations
Dopants
Impurities
Lattice thermal conductivity
Phonons
Specific heat
Thermal conductivity
Doped semiconductors
III-V semiconductors
Wide band gap systems
Thermoreflectance
Boltzmann theory
Crystal growth
Density functional calculations
Density functional theory
Electroluminescence
Epitaxy
Raman spectroscopy
X-ray diffraction

Title: Thermal conductivity of GaN, 71GaN, and SiC from 150 K to 850 K

Citation Formats

References (129)

Cited By (6)

Similar Records

Related Subjects

Title: Thermal conductivity of GaN, ⁷¹GaN, and SiC from 150 K to 850 K