Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Rounds, Robert; Sarkar, Biplab; Sochacki, Tomasz; Bockowski, Michal; Imanishi, Masayuki; Mori, Yusuke; Kirste, Ronny; Collazo, Ramón; Sitar, Zlatko

doi:10.1063/1.5047531

Title: Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Journal Article · Wed Sep 12 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5047531· OSTI ID:1540253

Rounds, Robert ^[1];

^[1]; Sochacki, Tomasz ^[2]; Bockowski, Michal ^[2]; Imanishi, Masayuki ^[3]; Mori, Yusuke ^[3]; Kirste, Ronny ^[1]; Collazo, Ramón ^[1]; Sitar, Zlatko ^[1]

North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
Polish Academy of Sciences, Warsaw (Poland). Inst. of High Pressure Physics
Osaka Univ., Suita, Osaka (Japan). Graduate School of Engineering, Division of Electrical, Electronic, and Information Engineering

The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m^-1 K^-1 and 196 W m^-1 K^-1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m^-1 K^-1 and 224 W m^-1 K^-1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Finally, deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.

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Research Organization:: Adroit Materials, Cary, NC (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0011883

OSTI ID:: 1540253

Alternate ID(s):: OSTI ID: 1469744

Journal Information:: Journal of Applied Physics, Vol. 124, Issue 10; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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