Thermal conductivity of GaN, 71GaN, and SiC from 150 K to 850 K

Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G.

doi:10.1103/physrevmaterials.3.014601

Thermal conductivity of GaN, ⁷¹GaN, and SiC from 150 K to 850 K

Journal Article · Wed Jan 02 23:00:00 EST 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.3.014601· OSTI ID:1613744

Zheng, Qiye ^[1]; Li, Chunhua ^[2]; Rai, Akash ^[3]; Leach, Jacob H. ^[4]; Broido, David A. ^[2]; Cahill, David G. ^[3]

Univ. of Illinois at Urbana-Champaign, IL (United States); DOE/OSTI
Boston College, Chestnut Hill, MA (United States)
Univ. of Illinois at Urbana-Champaign, IL (United States)
Kyma Technologies, Inc., Raleigh, NC (United States)

The thermal conductivity (Λ) of wide-band-gap semiconductors GaN and SiC is critical for their application in power devices and optoelectronics. Here, we report time-domain thermoreflectance measurements of Λ in GaN, ⁷¹GaN, and SiC between 150 and 850 K. The samples include bulk c- and m-plane wurtzite GaN grown by hydride vapor phase epitaxy (HVPE) and ammonothermal methods; homoepitaxial natural isotope abundant GaN and isotopically enriched ⁷¹GaN layers with thickness of 6–12 μm grown on c-, m-, and a-plane GaN substrates grown by HVPE; and bulk crystals of 4H and 6H SiC. In low dislocation density (<10⁷ cm^–2) bulk and homoepitaxial GaN, Λ is insensitive to crystal orientation and doping concentration (for doping <10¹⁹ cm^–3); Λ ≈ 200 W m^–1 K^–1 at 300 K and ≈ 50 W m^–1 K^–1 at 850 K. In ⁷¹GaN epilayers at 300 K, Λ is ≈15% higher than in GaN with natural isotope abundance. The measured temperature dependence of Λ in GaN is stronger than predicted by first-principles based solutions of the Boltzmann transport equation that include anharmonicity up to third order. This discrepancy between theory and experiment suggests possible significant contributions to the thermal resistivity from higher-order phonon scattering that involve interactions between more than three phonons. The measured Λ of 4H and 6H SiC is anisotropic, in good agreement with first-principles calculations, and larger than GaN by a factor of ≈1.5 in the temperature range 300 < T < 850K. Furthermore, this paper provides benchmark knowledge about the thermal conductivity in wide-band-gap semiconductors of GaN, ⁷¹GaN, and SiC over a wide temperature range for their applications in power electronics and optoelectronics.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000876

OSTI ID:: 1613744

Alternate ID(s):: OSTI ID: 1489429

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 1 Vol. 3; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Thermal transport of nanoporous gallium nitride for photonic applications Zhou, Taofei; Zhang, Cheng; ElAfandy, Rami Journal of Applied Physics, Vol. 125, Issue 15 https://doi.org/10.1063/1.5083151	journal	April 2019
Thermal expansion coefficients of high thermal conducting BAs and BP materials Li, Sheng; Taddei, Keith M.; Wang, Xiqu Applied Physics Letters, Vol. 115, Issue 1 https://doi.org/10.1063/1.5103166	journal	July 2019
Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance Park, Kihoon; Bayram, Can Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5126970	journal	November 2019
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling Tang, Dao-Sheng; Qin, Guang-Zhao; Hu, Ming Journal of Applied Physics, Vol. 127, Issue 3 https://doi.org/10.1063/1.5133105	journal	January 2020
Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material Chou, Ting-Han; Lindsay, Lucas; Maznev, Alexei A. Physical Review B, Vol. 100, Issue 9 https://doi.org/10.1103/physrevb.100.094302	journal	September 2019
Stronger role of four-phonon scattering than three-phonon scattering in thermal conductivity of III-V semiconductors at room temperature Yang, Xiaolong; Feng, Tianli; Li, Ju Physical Review B, Vol. 100, Issue 24 https://doi.org/10.1103/physrevb.100.245203	journal	December 2019
Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride Chen, Ke; Song, Bai; Ravichandran, Navaneetha K. Science, Vol. 367, Issue 6477 https://doi.org/10.1126/science.aaz6149	journal	January 2020

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Related Subjects

36 MATERIALS SCIENCE
Boltzmann theory
Crystal growth
Defects
Density functional calculations
Density functional theory
Disclinations & dislocations
Dopants
Doped semiconductors
Electroluminescence
Epitaxy
III-V semiconductors
Impurities
Lattice thermal conductivity
Materials Science
Phonons
Raman spectroscopy
Specific heat
Thermal conductivity
Thermoreflectance
Wide band gap systems
X-ray diffraction